Oxide of non-basal quasi-polar 6H-SiC surfaces

Abstract

Non-basal surfaces of 6H-SiC, which are thought to exhibit polar behaviour, were thermally oxidized in steam. The resulting oxide thickness was determined by two methods: a non-contact measurement of the oxide capacitance and a physical measurement of the step height from an etched pattern. The surface was found to oxidize faster than its counterpart, i.e. the surface. When these results were compared with results of the oxidation of the basal {0001} and surfaces, the effective permittivity of the oxide was found to be closer to the ideal value of 3.9 for SiO2 grown on the and surfaces. This important result for these novel crystalline surfaces could be beneficial in the fabrication of MOSFET devices on SiC.

Porous SiC Preparation, Characterization and Morphology

“…(1102) are then terminated with carbon atoms. An oxidation experiment conducted on 6H-SiC using (1103) and (1103) surfaces, which are somewhat similar to the respective (1102) and (1102) surfaces in 4H-SiC, confirms the model [24]. Despite the lack of data on 4H-SiC, we are confident that silicon termination makes the (1102) and (1102) surfaces behave like etch-stops under anodization conditions, similar to the (0001) face.…”

“…Nonbasal planes corresponding to pore surfaces are interesting candidates for boule growth experiments, electrical properties studies, and surface science investigations [24][25][26]. Already, low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) have revealed differences in the composition of the (1102)and (1102) surfaces of 4H-SiC [26].…”

ReaxFF molecular dynamics study on oxidation behavior of 3C-SiC: Polar face effects

“…Plenty of experimental efforts have been devoted to explore the oxidation process of these silicon carbide materials, while limitation exists for reaching temperature higher than 2000 K as well as understanding the break and formation of molecular bonding during chemical reaction. [8][9][10][11][12][13][14][15][16][17] Besides, recent studies on compressive properties of SiC composite materials also found temperature-dependent phenomena and attributed them to the oxidation of SiC. Therefore, it is difficult to provide a clear explanation due to the limitation of observation condition.…”

Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity

“…The chemical reaction in these (11-2-n) and (11-2n) faces showed the polarity like the (0001) Si-and (000-1) C-faces, respectively. Though the specific surfaces such as 4H-SiC {1-102} and 6H-SiC {1-103} were reported as the quasi-polar planes [8,9], all the pyramidal planes around 60 o -and 120 o -inclined faces from the (000-1) C face will show the polarity.…”