Packaging Effects on RadFET Sensors for High Energy Physics Experiments

Mekki, Julien; Dusseau, L.; Gläser, M.; Guatelli, Susanna; Moll, M.; Pia, M.G.; Ravotti, F.

doi:10.1109/tns.2009.2014376

Cited by 15 publications

(4 citation statements)

References 41 publications

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“…RadFET'lerin tüm üretim süreçleri ATHENA'ya işlenmiştir: i.) Si alt taşa 1x10 14 atom/cm 3 konsantrasyonunda fosfor (P) dağıtılmıştır. Böylece programa Si, n tipi olarak tanıtılmıştır.…”

Section: Radfet'leri̇n Tcad'de Tasarlanmasi Ve İmplantasyon Modeli̇unclassified

Farkli B+ İmplantasyon Koşullari İçi̇n Radfet’leri̇n Elektri̇ksel Karakteri̇zasyonunun Tcad Benzeti̇m Programi İle İncelenmesi̇

Kahraman¹,

Yılmaz²

2017

Uludağ University Journal of the Faculty of Engineering

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Bu çalışmada, RadFET'lerin kapı oksit tabakasına implante edilmiş B + iyonlarının V th üzerine etkisi, Silvaco TCAD benzetim programı ile incelenmiştir. 300 nm ve 400 nm kalınlıklarında kapı oksite sahip RadFET'ler, tüm üretim adımları TCAD'e tanıtılarak tasarlanmıştır. İmplantasyon öncesi ve sonrası V th değerleri, RadFET'lerin akım-gerilim (I d-V g) karakteristiklerinden elde edilmiştir. Artan implantasyon enerjisi, V th değerlerinin düşmesine neden olmuştur. V th değerinin sıfır olması, daha geniş ölçülebilir doz aralığına sahip RadFET'lerin üretilmesi için önemlidir. Ancak, implantasyon enerjisindeki sürekli artışla birlikte V th , p-kanalı oluşumu nedeniyle negatif voltaj değerlerinde gözlenmemiştir. 300 nm-RadFET için en düşük V th değeri, 6.5×10 11 iyon/cm 2 bor dozu ve 72 keV'de,-1.082 V olarak bulunmuştur. 400 nm-RadFET için bu değer, 2.3×10 11 iyon/cm 2 bor dozu ve 106 keV'de,-1.139 V olarak elde edilmiştir.

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Section: Radfet'leri̇n Tcad'de Tasarlanmasi Ve İmplantasyon Modeli̇unclassified

Farkli B+ İmplantasyon Koşullari İçi̇n Radfet’leri̇n Elektri̇ksel Karakteri̇zasyonunun Tcad Benzeti̇m Programi İle İncelenmesi̇

Kahraman¹,

Yılmaz²

2017

Uludağ University Journal of the Faculty of Engineering

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“…The usability of Metal-Oxide-Semiconductor-Field Effect Transistors (MOSFETs) as radiation sensors was first demonstrated by Holmes-Siedle [1], followed by intense research into the use of these dosimeters in different fields. Optimized for the purpose of improving radiation sensitivity, p-channel MOSFETs (also known as RadFETs) are used to obtain information about space-radiation in spacecraft [2], to determine the radiation damage that may occur in electronic components in centers such as CERN where the experiments with high radiation field are conducted [3], and to detect the possible radioactive leakage in nuclear power plants. The forms of these chips placed in the wristwatch are attached to military personnel and serve as a warning system in case of possible radioactive danger [4].…”

Section: Introductionmentioning

confidence: 99%

Dose responses of the SiO2 used in radiation sensors in field effect transistor form

Kahraman

Morkoç

Yılmaz

et al. 2021

jbm

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To investigate the structural changes in the SiO2 (silicon dioxide) layer, which is the sensitive region of the RadFET radiation sensors used in the medical field, and to elaborate the impacts of these modifications on electrical characteristics. Methods: Dry oxidation method was used to grow the SiO2 film on n-type Si (100) and SiO2 MOS capacitors were produced by using DC magnetron sputtering. Irradiation was carried out using a 60 Co radioactive source at a dose range of 1 kGy-50 kGy. XRD (X-ray diffraction) results showed that no crystalline structure was formed in the studied dose range. Results: The results obtained from XPS (X-ray photoelectron spectroscopy) showed that Si-Si oxygen deficient bonds were formed in the post-production structure, resulting in the observation of flat band voltage (𝑉 𝑓𝑏 ) at negative values. Conclusions: In general, the Si-Si oxygen deficient bond content increased with increasing radiation dose, causing the C-V curve to shift towards larger negative voltage values as desired. The device sensitivity was almost constant after 25 kGy.

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“…The ra di a tion sen si tive MOSFET can be used to es timate the ion iz ing ra di a tion ab sorbed dose by mea suring in the thresh old volt age (V T ) [1,2]. The p-chan nel MOSFET, also known as the Ra di a tion Sen si tive Field Ef fect Tran sis tors (RADFET) or pMOS do sim e ters, were used in many ap pli ca tion ar eas, such as the space ra di a tion mea sure ments, high en ergy phys ics ex per iments, ra dio ther apy and per sonal do sim e ter for mil itary ap pli ca tions [3][4][5][6]. Us ing the RADFET for ra di ation dose mea sure ments has cer tain pos i tive as pects, such as the im me di ate and non-de struc tive read out, the low power con sump tion, an easy cal i bra tion and a rea son able sen si tiv ity and reproductability [7].…”

Section: Introductionmentioning

confidence: 99%

The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET

Obrenovic

Pejović

Lazarevic³

et al. 2018

NUCL TECH RAD PROT

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The vari a tions in the thresh old volt age shift in p-chan nel power VDMOSFET dur ing the gamma ray ir ra di a tion was in ves ti gated in the dose range from 10 to 100 Gy. The in ves ti gations were per formed with out the gate bias and with 5 V gate bias. The de vices with 5 V gate bias ex hibit a lin ear de pend ence be tween the thresh old volt age shift and the ra di a tion dose. The den si ties of ra di a tion-in duced fixed and switch ing traps were de ter mined from the sub-thresh old I-V char ac ter is tics us ing the midgap tech nique. It was shown that the cre ation of fixed traps is dom i nant dur ing the ir ra di a tion. The pos si ble mech a nisms re spon si ble for the fixed and switch ing traps cre ation are also an a lyzed in this pa per.

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Packaging Effects on RadFET Sensors for High Energy Physics Experiments

Abstract: Abstract-RadFETs in customized chip carrier packages are installed in the LHC Experiments as radiation monitors. The package influence on the dose measurement in the complex LHC radiation environment is evaluated using Geant4 simulations and experimental data.

Cited by 15 publications

References 41 publications

Farkli B+ İmplantasyon Koşullari İçi̇n Radfet’leri̇n Elektri̇ksel Karakteri̇zasyonunun Tcad Benzeti̇m Programi İle İncelenmesi̇

Farkli B+ İmplantasyon Koşullari İçi̇n Radfet’leri̇n Elektri̇ksel Karakteri̇zasyonunun Tcad Benzeti̇m Programi İle İncelenmesi̇

Dose responses of the SiO2 used in radiation sensors in field effect transistor form

The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET

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