Passivation Materials for a Reliable Fine Pitch RDL

Moreau, S.; Allouti, N.; Ribiere, Celine; Charbonnier, Jean; Bouchu, D.; Michel, Jean‐Philippe; Buffet, N.; Chausse, P.

doi:10.1109/ectc.2018.00240

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…It was observed how different stresses could lead to the formation of Cu oxide which was due to the polymer insulator absorbing oxygen and water during these stress tests. Moreau et al were also able to demonstrate how using inorganic (SiN, SiO 2 ) layers and organic/inorganic (fluoropolymer and Ni) bilayers as passivation layers, could halt corrosion of the Cu RDLs and stop Cu oxide formation. Although, from their SEM images their passivation layers appear to be quite thick (no thickness is specified in the text) possibly greater than 100 nm, their study is vitally important as it shows that passivation layers or barrier layers can be used to stop Cu oxide forming.…”

mentioning

confidence: 99%

Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging

Chery

Armini

2022

J. Phys. Chem. Lett.

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mentioning

confidence: 99%

Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging

Chery

Armini

2022

J. Phys. Chem. Lett.

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“…Herein, the topmost layer of RDL is coated with a passivation layer of silicon dioxide. This layer protects the underlying layers from environmental factors, such as moisture and chemical contaminants [11,12].…”

Section: Rdl Configurationmentioning

confidence: 99%

Impact of Interfacial Crack on Redistribution Layer of TSV based 3D Integration

Kumari

Chandrakar

Majumder

2023

Preprint

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The interfacial strength of redistribution layer (RDL) and passivation layer plays a crucial role in ensuring the optimal performance and reliability of through silicon vias (TSVs), as it significantly impacts their electrical characteristics and thermal stability, especially in high-density packaging with constrained space. Therefore, it is important to identify and address the interfacial cracks in the RDL that arises due to the factors like manufacturing defects, mechanical stress, and thermal cycling. Neglecting these issues can lead to a range of problems, including reduced device performance, intermittent or complete loss of functionality, and even permanent damage. Owing to ensure their reliability and longevity, this paper introduces for the first time considers the RDL cracks under heating and cooling conditions to model an equivalent electrical circuit and demonstrates the performance in terms of thermal stress, power dissipation, power delay product (PDP), crosstalk delay and power loss. Remarkably, our analysis of interfacial cracked TSV has yielded highly positive results. Specifically, a striking improvement of 22.29% have been observed in case of crosstalk delay, as the minimum crack width of 0.18µm at heating mode approached towards the defect-free condition. A thorough validation of the analytical results reveals an excellent agreement with the EM result, for a negligible deviation of only 3.4% observed in the scattering parameter. This close correspondence between the simulated and quantitative results lends a strong support to the accuracy and reliability of the research findings. Furthermore, this analysis elucidated that the cooling mode is significantly more susceptible to PDP than heating, with a vulnerability that is 7.19% higher at a crack width of 0.18µm.

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Delamination between dielectric layers of FOPLP due to copper residue under high temperature storage conditions

Park

et al. 2022

2022 IEEE 24th Electronics Packaging Technology Conference (EPTC)

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Passivation Materials for a Reliable Fine Pitch RDL

Cited by 6 publications

References 14 publications

Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging

Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging

Impact of Interfacial Crack on Redistribution Layer of TSV based 3D Integration

Delamination between dielectric layers of FOPLP due to copper residue under high temperature storage conditions

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