Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

Abstract

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm2 V−1 s−1 at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W−1 at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits.

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

“…and group III–VI nanomaterials (InSe,38, 39, 40, 41, 42 GaSe,43, 44, 45, 46, 47, 48 etc.) have been extensively investigated in many fields including photodetectors,49, 50, 51, 52, 53, 54, 55, 56, 57, 58 gas sensors,59, 60 field effect transistors (FETs),38, 61, 62, 63, 64, 65 and flexible devices 66, 67, 68…”

Morphological evolution of self-deposition Bi2Se3 nanosheets by oxygen plasma treatment

“…A detailed study about the Bi 2 Se 3 thin film treated with oxygen plasma helps understand the morphological evolution and thinning mechanism. Various experimental groups have investigated the morphological evolution of the thin film comprising nanosheets by oxygen plasma treatment172021222324. The atomic-scale mechanisms of graphene etched by oxygen plasma were studied by first-principles molecular dynamics calculations combined with rare events sampling techniques25.…”

Newborn 2D materials for flexible energy conversion and storage

“…Upon the excitation of light, the bound electron-hole pairs are generated by the incident photons whose energy is greater than the band gap of the semiconductor and the yielded photocurrent is correlated with light intensity [15]. Compared to silicon with an indirect band gap or graphene without a band gap [59], NB2DMs with tunable direct band gap and high absorption efficiency have emerged as potential candidates for next-generation flexible photodetectors [22,[71][72][73][74][75][76][77][78][79][80][81][82][83][84].…”