Performance Improvement of ${\rm HfO}_{2}/{\rm SrTiO}_{3}$ Hetero-Oxide Transistors Using Argon Bombardment

Zhu, Zijing; Luo, Zhijiong; Xu, Jie; Zhao, Hengliang; Chen, Shuai

doi:10.1109/led.2013.2260820

Cited by 8 publications

(11 citation statements)

References 14 publications

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“…In [8], we reported that by 45-s argon bombardment, the drive currents of HfO 2 /SrTiO 3 device were increased by about eight times, accompanied with more than five times increase in the field-effect mobility, but the mechanism is not clear. In above, it is shown that the performance of HfO 2 /SrTiO 3 device can be much improved by reducing interface traps.…”

Section: Resultsmentioning

confidence: 99%

“…It may be more proper to calibrate E S for each device, but it will not affect our conclusion. In addition, the effective mobility is set to 4 cm 2 /Vs, which is based on the experimental data [8]. As shown in the inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The argon plasma was generated by induced coupled plasma, where source power was 400 W, RF power was 50 W, and argon flow rate was 40 sccm. More information on device and process can be referred to our previous publication [8].…”

Section: Device Fabrication and Simulationmentioning

confidence: 99%

“…It was shown that the performance of SrTiO 3 -based field-effect devices strongly depended on the choice of gate dielectrics and their deposition process [3]- [7]. Recently, we found that the performance of HfO 2 /SrTiO 3 device was remarkably improved with argon bombardment [8]. The reported field-effect mobility (μ FE ) varies widely from 0.1 to 4.2 cm 2 /Vs at room temperature [3]- [8].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, we found that the performance of HfO 2 /SrTiO 3 device was remarkably improved with argon bombardment [8]. The reported field-effect mobility (μ FE ) varies widely from 0.1 to 4.2 cm 2 /Vs at room temperature [3]- [8]. However, the implicit mechanisms have seldom been discussed.…”

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism in SrTiO<sub>3</sub>-Based Field-Effect Transistors

Zhu

Zhao

et al. 2015

IEEE Trans. Electron Devices

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In this brief, we find that the previously reported performance improvement of HfO 2 /SrTiO 3 devices after argon bombardment may be attributed to the decrease of interface traps. With the greatly reduced interface trap density, the HfO 2 /SrTiO 3 device after argon bombardment shows remarkable reduction of turn-ON voltage shift with decreasing temperature, which is in contrast with the unbombarded HfO 2 /SrTiO 3 device. Though HfO 2 /SrTiO 3 devices behave like conventional transistors, Al 2 O 3 /SrTiO 3 devices show very different linear transfer characteristics, which may be due to the high density of shallow donor states near the Al 2 O 3 /SrTiO 3 interface. The exhibited SrTiO 3 -based device characteristics are studied by experiments and simulations. The simulations with drift-diffusion model reproduce the experimental results.Index Terms-Al 2 O 3 /SrTiO 3 , HfO 2 /SrTiO 3 , interface traps, oxygen vacancy, transistors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Device Fabrication and Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism in SrTiO<sub>3</sub>-Based Field-Effect Transistors

Zhu

Zhao

et al. 2015

IEEE Trans. Electron Devices

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Conductive Oxide Interfaces for Field Effect Devices

Kornblum

2019

Adv Materials Inter

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The discovery of 2D conductivity at the interface of insulating oxides uncovered a trove of rich correlated‐electron physics, whose origins are still being debated 15 years later. In parallel to the massive research thrust into the fundamentals of these phenomena, the past decade has seen dramatic progress in harnessing this system toward practical devices. This report summarizes the physical background of the interface phenomena, and presents the recent evolution of field effect devices based on conductive oxide interfaces. The discussion is built on progressive examples of device concepts, covering a wide range of oxide material systems. The role of defects is critically interwoven throughout the narrative. The promises and hurdles toward practical large‐scale implementation of these devices are highlighted at the conclusion. This report is intended to bridge between the physics of conductive oxide interfaces and the practicalities of developing them into device technology. By presenting an overview of the state of the art, it is hoped to inspire new applications for these diverse new capabilities. The journey of conductive oxide interfaces from fundamentals to technology may be viewed as a prototype for the future maturation of other systems of emergent physics and novel materials from labs to devices.

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Depletion Mode MOSFET Using La-Doped BaSnO₃ as a Channel Material

Yue

Prakash

Robbins

et al. 2018

ACS Appl. Mater. Interfaces

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The high room-temperature mobility that can be achieved in BaSnO has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on the first demonstration of n-type depletion-mode FET using hybrid molecular beam epitaxy grown La-doped BaSnO as a channel material. The devices utilize a heterostructure metal-oxide semiconductor FET (MOSFET) design that includes an epitaxial SrTiO barrier layer capped with a thin layer of HfO used as a gate dielectric. A field-effect mobility of ∼70 cm V s, a record high transconductance value of >2mS/mm at room temperature, and the on/off ratio exceeding 10 at 77 K were obtained. Using temperature- and frequency-dependent transport measurements, we quantify the impact of the conduction band offset at the BaSnO/SrTiO interface as well as bulk and interface traps on device characteristics.

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Performance Improvement of ${\rm HfO}_{2}/{\rm SrTiO}_{3}$ Hetero-Oxide Transistors Using Argon Bombardment

Cited by 8 publications

References 14 publications

Conduction Mechanism in SrTiO<sub>3</sub>-Based Field-Effect Transistors

Conduction Mechanism in SrTiO<sub>3</sub>-Based Field-Effect Transistors

Conductive Oxide Interfaces for Field Effect Devices

Depletion Mode MOSFET Using La-Doped BaSnO₃ as a Channel Material

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Performance Improvement of ${\rm HfO}_{2}/{\rm SrTiO}_{3}$ Hetero-Oxide Transistors Using Argon Bombardment

Cited by 8 publications

References 14 publications

Conduction Mechanism in SrTiO<sub>3</sub>-Based Field-Effect Transistors

Conduction Mechanism in SrTiO<sub>3</sub>-Based Field-Effect Transistors

Conductive Oxide Interfaces for Field Effect Devices

Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material

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Depletion Mode MOSFET Using La-Doped BaSnO₃ as a Channel Material