Photoconductivity sampling of low-temperature-grown Be-doped GaAs layers

Eusebe, H.; Roux, Jean‐François; Coutaz, Jean‐Louis; Krotkus, A.

doi:10.1063/1.2001151

Cited by 23 publications

(19 citation statements)

References 19 publications

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“…In the case of DT, 800 nm pulses were used for carrier excitation, whereas 1450 nm wavelength pulses were used for probing the dynamics of electron trap population. Figure 4 illustrates transients measured by three different techniques on LTG GaAs layer grown at 250 • C and annealed at 650 • C [8,13]. The characteristic decay time of the PL and TR transients as well as the rise time of DT transient are of the order of 500 fs and are interpreted as the electron capture time.…”

Section: Carrier Dynamics In Ltg Gaasmentioning

confidence: 99%

Semiconductor materials for ultrafast optoelectronic applications

Krotkus¹,

Bertulis²,

Adomavičius³

et al. 2009

Lithuanian J. Phys.

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The paper presents a review of experimental investigations of various semiconductor materials used for the development of ultrafast optoelectronic devices activated by femtosecond laser pulses that have been performed at the Optoelectronics Laboratory of the Semiconductor Physics Institute during the period from 1997 to 2008. Technology and physical characteristics of low-temperature-grown GaAs and GaBiAs layers as well as the effect of terahertz radiation from the femtosecond laser excited semiconductor surfaces are described and analysed.

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Section: Carrier Dynamics In Ltg Gaasmentioning

confidence: 99%

Semiconductor materials for ultrafast optoelectronic applications

Krotkus¹,

Bertulis²,

Adomavičius³

et al. 2009

Lithuanian J. Phys.

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“…6 The low-temperature PC response has been investigated under the intense THz radiation provided by a free-electron laser (FEL). 12 This has allowed electron and hole mobilities to be deduced.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor terahertz emitters

Hargreaves

Lewis

Henini

2007

Microelectronics: Design, Technology, and Packaging III

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There is a demand for more efficient sources of electromagnetic radiation in the terahertz (THz, 10 12 Hz) frequency region. One common method of generating THz-frequency radiation is to direct fs pulses of nearinfrared laser radiation onto a material which then re-radiates. This approach permits coherent pulses of THz radiation to be produced which, for example, may be used for time-domain spectroscopy (TDS). There are three principal mechanisms by which THz radiation is generated under the stimulus of ultra-short pulses: optical rectification (OR) in electro-optic materials, photoconductivity (PC) from materials with suitable electrodes, and surface-field (SF) effects in other cases. The III-V compound semiconductor GaAs doped with the acceptor impurity Be produces relatively small amounts of THz radiation via the OR and SF mechanisms, but relatively large amounts via the PC mechanism. We have studied the PC emission of THz radiation from layers of GaAs(Be) grown epitaxially on GaAs substrates. The THz power generated depends on the bias applied to the electrodes approximately quadratically. This is typical of the PC mechanism. The dependence of the THz power on the power of the pump beam is approximately linear. In general, the THz generated tends to decrease as the doping level increases. If the doping level exceeds the Mott limit and the material becomes highly conductive then the photoconductivity and consequently the THz production are quenched.

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“…In the case of PSW made of ultrafast materials, the dominant process is the trapping of the photocarriers, which leads to the ps response time. Such a short pulse duration can hardly be determined by conventional oscilloscopes, which exhibit a limited response time, so alternative optoelectronic techniques, based on time-equivalent sampling, have been developed [2, 21,22]. Unfortunately, these high-performance methods do not sense the electrical pulse at the PSW location but only after it has propagated along the CPW over few hundreds of µm or more.…”

Section: Device Characterizationmentioning

confidence: 99%

Characterization of ultrafast InGaAs photoconductors and their application to signal processing in radio-over-fibre telecommunications

Horváth¹,

Roux²,

Coutaz³

et al. 2018

physics

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Characterization of nitrogen ion implanted InGaAs photoconductive devices is performed in both the electronic and optoelectronic regime. In the dark state, the optoelectronic device shows a dark resistance of a few kΩ and a wide electrical bandwidth in the RF domain. This large bandwidth is also confirmed in the illuminated state, optoelectronic autocorrelation experiments performed with ultra-short optical pulses allow us to measure the picosecond optoelectronic time response of the device. In the second part of the work, we investigate the potentiality of this component to be used in the photonic assisted heterodyne detection of RF modulated carriers for radio-over-fibre telecommunications. We demonstrate that this photoconductor, thanks to its properties, can be used to demodulate complex data modulation formats in such an experiment.

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Photoconductivity sampling of low-temperature-grown Be-doped GaAs layers

Cited by 23 publications

References 19 publications

Semiconductor materials for ultrafast optoelectronic applications

Semiconductor materials for ultrafast optoelectronic applications

Semiconductor terahertz emitters

Characterization of ultrafast InGaAs photoconductors and their application to signal processing in radio-over-fibre telecommunications

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