Photoluminescence Quenching and Charge Transfer in Artificial Heterostacks of Monolayer Transition Metal Dichalcogenides and Few-Layer Black Phosphorus

Abstract

Transition metal dichalcogenides monolayers and black phosphorus thin crystals are emerging two-dimensional materials that demonstrated extraordinary optoelectronic properties. Exotic properties and physics may arise when atomic layers of different materials are stacked together to form van der Waals solids. Understanding the important interlayer couplings in such heterostructures could provide avenues for control and creation of characteristics in these artificial stacks. Here we systematically investigate the optical and optoelectronic properties of artificial stacks of molybdenum disulfide, tungsten disulfide, and black phosphorus atomic layers. An anomalous photoluminescence quenching was observed in tungsten disulfide-molybdenum disulfide stacks. This was attributed to a direct to indirect band gap transition of tungsten disulfide in such stacks while molybdenum disulfide maintains its monolayer properties by first-principles calculations. On the other hand, due to the strong build-in electric fields in tungsten disulfide-black phosphorus or molybdenum disulfide-black phosphorus stacks, the excitons can be efficiently splitted despite both the component layers having a direct band gap in these stacks. We further examine optoelectronic properties of tungsten disulfide-molybdenum disulfide artificial stacks and demonstrate their great potentials in future optoelectronic applications.

Physisorption-Based Charge Transfer in Two-Dimensional SnS2 for Selective and Reversible NO2 Gas Sensing

“…At the same time, the generated surface dipoles between the gas molecules and SnS2 surface are strong enough to split the neutral excitons, leading to a significant reduction in their recombination and subsequently a strongly quenched PL (Figure 5b), which is analogous to the PL modulation in MoS2-WS2 heterostacks or electrical gating of MoS2. 61,62 In addition, it seems that such gas molecules induced charge transfers show no difference on the crystal polytypes of SnS2 as the quenched degrees of the 2H and 4H PL peaks are similar.…”

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”

New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

“…5,18,19,20,21,22 For example, monolayer TMD heterostructures artificially stacked by mechanical transfer techniques, 5 i.e. WS 2 /MoS 2 23, 24 and WSe 2 /MoS 2, 25 exhibit interlayer coupling that enables electron-hole recombination between layers that modifies their optoelectronic properties. By placing h-BN layers in between TMD layers, the coupling can be modulated.…”