Photonic integration for UV to IR applications

Blumenthal, D.J.

doi:10.1063/1.5131683

Cited by 98 publications

(90 citation statements)

References 118 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We anticipate that the wide-band transparency of Ta 2 O 5 35 can be exploited for implementing integrated quantum photonics experiments in the visible wavelength range with further improvements in detection efficiency, such as longer plateaus of saturated internal OCDE, because the sensitivity of SNSPDs increases for shorter wavelengths 64 . The visible wavelength range is of particular relevance for future integrated quantum photonic applications exploiting single-photon generation from waveguide-coupled quantum emitters 65 – 67 , which will tremendously benefit from the low intrinsic autofluorescence 40 , 41 and absorption 39 of the tantalum pentoxide material system.…”

Section: Discussionmentioning

confidence: 99%

“…Tantalum pentoxide is well-known for its excellent optical properties 32 – 34 and finds increasing recognition as a promising high-refractive index dielectric for realizing photonic integrated circuits 35 , 36 . The compatibility of Ta 2 O 5 thin-films with modern nanofabrication routines is evident from its established use in complementary metal oxide semiconductor processes, exploiting the material’s high relative permittivity 37 , which will also benefit on-chip electric read-out circuitry for SNSPDs, e.g.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Superconducting nanowire single-photon detectors integrated with tantalum pentoxide waveguides

Wolff

Vogel

Splitthoff

et al. 2020

Sci Rep

View full text Add to dashboard Cite

Photonic integrated circuits hold great potential for realizing quantum technology. Efficient single-photon detectors are an essential constituent of any such quantum photonic implementation. In this regard waveguide-integrated superconducting nanowire single-photon detectors are an ideal match for achieving advanced photon counting capabilities in photonic integrated circuits. However, currently considered material systems do not readily satisfy the demands of next generation nanophotonic quantum technology platforms with integrated single-photon detectors, in terms of refractive-index contrast, band gap, optical nonlinearity, thermo-optic stability and fast single-photon counting with high signal-to-noise ratio. Here we show that such comprehensive functionality can be realized by integrating niobium titanium nitride superconducting nanowire single-photon detectors with tantalum pentoxide waveguides. We demonstrate state-of-the-art detector performance in this novel material system, including devices showing 75% on-chip detection efficiency at tens of dark counts per second, detector decay times below 1 ns and sub-30 ps timing accuracy for telecommunication wavelengths photons at 1550 nm. Notably, we realize saturation of the internal detection efficiency over a previously unattained bias current range for waveguide-integrated niobium titanium nitride superconducting nanowire single-photon detectors. Our work enables the full set of high-performance single-photon detection capabilities on the emerging tantalum pentoxide-on-insulator platform for future applications in integrated quantum photonics.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Superconducting nanowire single-photon detectors integrated with tantalum pentoxide waveguides

Wolff

Vogel

Splitthoff

et al. 2020

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Silicon photonics 1 , 2 has evolved into a mature technology enabling the generation, modulation, and detection of optical signals on-chip, via heterogeneous or hybrid integration of different materials 3 – 5 . Many integrated devices have been demonstrated using silicon photonics, including silicon-based lasers 6 , 7 .…”

Section: Introductionmentioning

confidence: 99%

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

et al. 2021

View full text Add to dashboard Cite

Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 106 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 106, corresponding to 1.0 dB m−1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m−1 loss in dies of only 5 × 5 mm2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si3N4 microresonators can exceed 2 × 108. This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator’s response even in the audio frequency band. Transferring this Si3N4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics.

show abstract

“…Additionally, optical delay lines have been realized to enable digital filtering, pulse shaping and data storage for all optical signal processing [99][100][101]. Si 3 N 4 has also been attractive for frequency comb generation [97,99,102] that can be used as an optical source for high-capacity data transmission [99,103], spectroscopy and optical metrology [104]. Supercontinuum generation on Si 3 N 4 has also been explored to obtain ultrabroadband spectra spanning from the visible to the mid-infrared [105,106].…”

Section: Silicon Nitridementioning

confidence: 99%

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Littlejohns

Rowe

et al. 2020

Applied Sciences

View full text Add to dashboard Cite

The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

show abstract

Photonic integration for UV to IR applications

Cited by 98 publications

References 118 publications

Superconducting nanowire single-photon detectors integrated with tantalum pentoxide waveguides

Superconducting nanowire single-photon detectors integrated with tantalum pentoxide waveguides

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Contact Info

Product

Resources

About