Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC:N:H Films

Chiang, Chiu-Chih; Wu, Zhen-Cheng; Wu, Wen‐Wei; Chen, Mao‐Chieh; Ko, Chih-Hsin; Chen, Hsi-Ping; Jang, Sun‐Joo; Yu, Chengpu; Liang, Mong–Song

doi:10.1143/jjap.42.4489

Cited by 21 publications

(16 citation statements)

References 9 publications

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“…Lower film density enhances the free volume within the films, which is known to be an effective way of reducing dielectric constant of materials. Dielectric constant of a materials also reduces due to increased porosity owing to the presence of hydrogen content [31,32]. Higher C content and presence of hydrogen collectively contributed to lower dielectric values of the boron carbide films.…”

Section: Xps and Reels Analysismentioning

confidence: 99%

Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

2021

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Amorphous hydrogenated boron carbide films were deposited on silicon and glass substrates using radio frequency sputtering. The substrate temperature was varied from room temperature to 300 °C. The substrate temperature during deposition was found to have significant effects on the electrical and optical properties of the deposited films. X-ray photoelectron spectroscopy (XPS) revealed an increase in sp2-bonded carbon in the films with increasing substrate temperature. Reflection electron energy loss spectroscopy (REELS) was performed in order to detect the presence of hydrogen in the films. Metal-insulator-metal (MIM) structure was developed using Al and hydrogenated boron carbide to measure dielectric value and resistivity. Deposited films exhibited lower dielectric values than pure boron carbide films. With higher substrate deposition temperature, a decreasing trend in dielectric value and resistivity of the films was observed. For different substrate temperatures, the dielectric value of films ranged from 6.5–3.5, and optical bandgap values were between 2.25–2.6 eV.

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Section: Xps and Reels Analysismentioning

confidence: 99%

Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

2021

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“…Thus, this increases the effective k value of stack dielectric films, and limits the reduction of the RC delay in ultra large-scale integration [4,5]. As a result, amorphous silicon carbide (SiC), amorphous silicon nitricarbide (SiCN), and amorphous silicon oxycarbide (SiCO) deposited using a plasmaenhanced chemical vapor deposition (PECVD) system have received much attention for applications as Cu cap barrier and ESL in Cu damascene process [6][7][8][9]. The intrinsic properties of carbon-doped barrier films (SiCN and SiCO) have been extensively investigated by many researchers [10 -12].…”

Section: Introductionmentioning

confidence: 99%

Comparison of characteristics and integration of copper diffusion-barrier dielectrics

et al. 2006

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“…In particular, new materials are needed with dielectric constants (k) less than those of the a-SiCN x :H (k = 5.0-5.7) materials currently utilized in low-k/Cu interconnects. 1 In this regard, plasma enhanced chemically vapor deposited (PECVD) BN is an intriguing material due to both it's reported low dielectric constant of 3.5-6.5 and high density of 1.8-2.0 g/cm. [2][3][4] Additional properties such as large band gap (> 5 eV), 2-4 high breakdown voltage 3,4 and low leakage currents 3,4 for PECVD BN make it an exciting material for low-k applications.…”

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X-ray Photoelectron Spectroscopy Investigation of the Schottky Barrier at a-BN:H∕Cu Interfaces

King

French

Bielefeld

et al. 2011

Electrochem. Solid-State Lett.

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Due to a low dielectric constant (k = 4-4.5) and high density (1.8-2.0 g/cm 3 ), Plasma Enhanced Chemically Vapor Deposited (PECVD) boron nitride (BN) is an intriguing Cu diffusion barrier material for use in low-k/Cu interconnects. However, relatively little is known about the electrical leakage behavior of BN in Cu interconnects or the Schottky barrier formed at the interface between these two materials. In this regard, x-ray photoelectron spectroscopy (XPS) has been utilized to determine the Schottky barrier present at the interface between polished Cu substrates and PECVD BN. Our measurements indicate a substantial barrier of 3.25 ± 0.25 eV for this interface.

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Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC:N:H Films

Cited by 21 publications

References 9 publications

Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

Comparison of characteristics and integration of copper diffusion-barrier dielectrics

X-ray Photoelectron Spectroscopy Investigation of the Schottky Barrier at a-BN:H∕Cu Interfaces

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