Plasma deposition of boron films with high growth rate and efficiency using carborane

Buzhinskij, O.I.; Otroshchenko, V. G.; Whyte, D.G.; Baldwin, M.J.; Conn, R.W.; Doerner, R.; Seraydarian, R.; Luckhardt, S.; Kugel, H.; West, W. P.

doi:10.1016/s0022-3115(02)01482-4

Cited by 31 publications

(18 citation statements)

References 4 publications

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“…As the oven temperature increases, the pressure increases exponentially first, then it increases with a constant dP/dt (pressure change rate) of about 0.001 mbar/s (not shown here). Carborane injection rates using 1 g and 10 g carborane as a function of oven temperature, together with reference values measured by Buzhinskij et al [4] are shown in Fig. 2.…”

Section: Kstar Boronization Systemmentioning

confidence: 91%

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First boronization in KSTAR

Hong

Lee

Kim

et al. 2010

Fusion Engineering and Design

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Section: Kstar Boronization Systemmentioning

confidence: 91%

“…The injection rate in KSTAR boronization system is an order of magnitude smaller than that in ref. [4], since the injection rate depends not only on the temperature of the oven, but also on both the volume of the oven and amount of carborane loaded in the container. Nevertheless, similar gradient of the injection rate in ref.…”

Section: Kstar Boronization Systemmentioning

confidence: 99%

First boronization in KSTAR

Hong

Lee

Kim

et al. 2010

Fusion Engineering and Design

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“…There is, at present, active research on the production and properties of better quality boron-containing films. [141][142][143] Li-based coatings have been less used thus far due to technical difficulties for the deposition of homogeneous films. [144][145][146] An efficient PECVD scheme has not yet been achieved, and Li is either evaporated or exposed to the hot plasma for coating.…”

Section: Controlled Fusion Researchmentioning

confidence: 99%

From Carbon Nanostructures to New Photoluminescence Sources: An Overview of New Perspectives and Emerging Applications of Low‐Pressure PECVD

Gordillo‐Vázquez¹,

Herrero²,

Tanarro³

2007

Chemical Vapor Deposition

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Low-pressure, plasma-enhanced (PE)CVD is a powerful and versatile technique that has been used for thin-film deposition and surface treatment since the early 1960s. However, it is only recently that it has been used in applications other than the different stages of microelectronic circuit fabrication. Now, PECVD is being used in emerging applications due to new materials and process requirements in a wide variety of areas, such as biomedical applications, solar cells, fuel cell development, fusion research, or the synthesis of silicon nanocrystals showing efficient photoluminescence, useful for future solid-state light sources. These new scenarios have stimulated further development of novel PECVD diagnostic techniques, together with fundamental experimental and theoretical studies aimed at a better understanding of some of the basic processes underlying the plasma/surface interaction. This paper gives an overview of some new research areas where PECVD is finding promising applications.

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“…Another solution in order to block deep tritium trapping process could be to implement a diffusion transport barrier on top of the graphite and CFC bulk [29]. Trials have been done in PISCES-B where carborane was injected in a low energy plasma (40 eV) and a boron carbide protecting film was deposited to protect the PFC surfaces and implement this diffusion barrier [29].…”

Section: Consequences Of Bulk Materials Tritium Trappingmentioning

confidence: 99%

“…Trials have been done in PISCES-B where carborane was injected in a low energy plasma (40 eV) and a boron carbide protecting film was deposited to protect the PFC surfaces and implement this diffusion barrier [29]. Nevertheless, this technique needs to be validated in real tokamak configuration and energy fluxes.…”

Section: Consequences Of Bulk Materials Tritium Trappingmentioning

confidence: 99%

Treatment of ITER plasma facing components: Current status and remaining open issues before ITER implementation

Grisolia¹,

Counsell²,

Dinescu³

et al. 2007

Fusion Engineering and Design

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The in-vessel tritium inventory control is one of the most ITER challenging issues which has to be resolved to fulfil safety requirements. This is due mainly to the presence of carbon as a constituent of plasma facing components (PFCs) which leads to a high fuel permanent retention. For several years now, physics studies and technological developments have been undertaken worldwide in order to develop reliable techniques which could be used in ITER severe environment (magnetic field, vacuum, high temperature) for in situ tritium recovery. The scope of this contribution is to review the present status of these achievements and define the remaining work to be done in order to propose a dedicated work program.Different treatment techniques (chemical treatments, photonic cleaning) will be reviewed. In the frame of ITER, they will be compared in terms of fuel removal rate as well as surface accessibility, type of production (gas or particulates), ability to clean mixed material.And lastly, consequences of bulk trapping observed in tokamak on the techniques currently under development will be addressed.Published with Fusion Engineering and Design: Fus. Eng. Des. 82 (2007Des. 82 ( ) 2390Des. 82 ( -2398

show abstract

Plasma deposition of boron films with high growth rate and efficiency using carborane

Cited by 31 publications

References 4 publications

First boronization in KSTAR

First boronization in KSTAR

From Carbon Nanostructures to New Photoluminescence Sources: An Overview of New Perspectives and Emerging Applications of Low‐Pressure PECVD

Treatment of ITER plasma facing components: Current status and remaining open issues before ITER implementation

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