Polarization retention of thin ferroelectricya capacitors

Park, Youn Jung; Chang, Jiyoun; Kang, Seok Ju; Park, Cheolmin

doi:10.1063/1.3216053

Cited by 15 publications

(10 citation statements)

References 14 publications

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“…Flexible active matrix devices (such as AMOLED and AMLCD) on flexible substrates have attracted considerable interest in the emerging display market because customers strongly need thinner, light, durable, unfragile, and designable devices [1][2] . Conventional amorphous silicon (a-Si) and low temperature polycrystalline (LTPS) TFTs have been considered as backplanes in flexible display for a long time because of wellmatured process, equipment and properties.…”

Section: Introductionmentioning

confidence: 99%

P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

Park

Hwang

et al. 2013

Symp Digest of Tech Papers

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Buffer layers on flexible substrates have strongly affected to electrical performance and instability in oxide TFTs. The oxide TFT on proper buffer layer/PI substrate showed better electrical performance than that on other buffer layers because the buffer layer with high gas diffusion barrier properties can suppress to generate defect states in semiconductor and/or interface from hydrogen and water penetration. The origins of flexible oxide TFT instabilities were systematically investigated by using in‐situ/ex‐situ measurement and chemical/physical analysis.

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Section: Introductionmentioning

confidence: 99%

P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

Park

Hwang

et al. 2013

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“…Hybrid nanocomposites made of polymer matrix and inorganic nanoparticles show great promise for optical, electronic, and magnetic device applications by offering functional properties arising collectively from both the host polymer and the nanoparticle fillers [1][2][3][4][5][6]. Recently, ferroelectric polymers, especially poly(vinylidene fluoride) (PVDF) and its copolymer with trifluoroethylene P(VDF-TrFE), have emerged as potential candidates for dielectric layers in high-energy-density capacitors due to their large dielectric strength (E b ), high electric displacement density (D), and low dielectric loss [7][8][9]. The relatively low dielectric constant k (<10) and early saturation of the polarization P at electric fields well below E b in ferroelectric polymers limit the energy density of these capacitors, but it can be greatly improved by embedding oxide nanoparticles (TiO 2 , SrTiO 3 , BaTiO 3 , BaSrTiO 3 , etc) to increase the effective dielectric constant [4,[10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Cluster synthesis of monodisperse rutile-TiO₂nanoparticles and dielectric TiO₂–vinylidene fluoride oligomer nanocomposites

et al. 2011

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The embedding of oxide nanoparticles in polymer matrices produces a greatly enhanced dielectric response by combining the high dielectric strength and low loss of suitable host polymers with the high electric polarizability of nanoparticles. The fabrication of oxide-polymer nanocomposites with well-controlled distributions of nanoparticles is, however, challenging due to the thermodynamic and kinetic barriers between the polymer matrix and nanoparticle fillers. In the present study, monodisperse TiO(2) nanoparticles having an average particle size of 14.4 nm and predominant rutile phase were produced using a cluster-deposition technique without high-temperature thermal annealing and subsequently coated with uniform vinylidene fluoride oligomer (VDFO) molecules using a thermal evaporation source, prior to deposition as TiO(2)-VDFO nanocomposite films on suitable substrates. The molecular coatings on TiO(2) nanoparticles serve two purposes, namely to prevent the TiO(2) nanoparticles from contacting each other and to couple the nanoparticle polarization to the matrix. Parallel-plate capacitors made of TiO(2)-VDFO nanocomposite film as the dielectric exhibit minimum dielectric dispersion and low dielectric loss. Dielectric measurements also show an enhanced effective dielectric constant in TiO(2)-VDFO nanocomposites as compared to that of pure VDFO. This study demonstrates for the first time a unique electroactive particle coating in the form of a ferroelectric VDFO that has high-temperature stability as compared to conventionally used polymers for fabricating dielectric oxide-polymer nanocomposites.

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“…The retention of the two remanent polarization states has been investigated as function of temperature, residual internal electric field, film thickness, and type of electrode materials. [18][19][20] Optimized devices operated well below the Curie temperature, T c , show an almost infinite data retention for both saturated polarization states. 18 Application of an electric field close to the coercive field leads to incomplete switching and, hence, to intermediate polarization states.…”

mentioning

confidence: 99%

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Zhao

Katsouras

Asadi

et al. 2016

Applied Physics Letters

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A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O3. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention was measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.

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Polarization retention of thin ferroelectricya capacitors

Cited by 15 publications

References 14 publications

P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

Cluster synthesis of monodisperse rutile-TiO₂nanoparticles and dielectric TiO₂–vinylidene fluoride oligomer nanocomposites

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

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Polarization retention of thin ferroelectricya capacitors

Cited by 15 publications

References 14 publications

P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

Cluster synthesis of monodisperse rutile-TiO2nanoparticles and dielectric TiO2–vinylidene fluoride oligomer nanocomposites

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

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Cluster synthesis of monodisperse rutile-TiO₂nanoparticles and dielectric TiO₂–vinylidene fluoride oligomer nanocomposites