Polycrystalline Silicon Nanowires Synthesis Compatible With CMOS Technology for Integrated Gas Sensing Applications

Rogel, Régis; Jacques, Emmanuel; Pichon, Laurent; Salaün, Anne‐Claire

doi:10.1109/ted.2013.2295511

Cited by 6 publications

(3 citation statements)

References 34 publications

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“…In the latter two cases, SiNWs are used as sensitive units to detect charged chemical species, responsible for variation of the channel conductance. In particular, top-gate and backgate transistors based on poly-SiNWs made by the spacer method showed to be good candidates to gas (ammonia) detection [25], pH sensing [26] and DNA hybridization [27].…”

Section: Accepted M Manuscriptmentioning

confidence: 99%

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors

Borgne

Salaün

Pichon

2016

Microelectronic Engineering

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Low temperature (≤ 600°C) polycrystalline silicon nanowires field effect transistors have been developed following a top down approach and classical photolithography techniques. N channel transistors have been tested with a single top-gate, bottom-gate and gate-all-around architecture in order to compare their electrical performances in relation to the interface state density. Analysis shows that surrounding gate enables control of parameters such as on-current, subthreshold slope and threshold voltage and offer potential further applications.

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Section: Accepted M Manuscriptmentioning

confidence: 99%

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors

Borgne

Salaün

Pichon

2016

Microelectronic Engineering

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“…In GAA FETs, charge carriers are under tight electrostatic control owing to the wrap around gate and this device assisted by excellent electrostatic controllability is considered to be interesting for ultimate scaled device [6,9]. Moreover, silicon nanowires are receiving much attention for bio sensing because they offer the prospect of realtime, label-free, high sensitivity sensing and they are now attracting a lot of attention for the development of mechanical [10], biological [11][12][13] or chemical [14,15] sensors.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization

Salaün

Borgne²,

Pichon

2018

ECS Trans.

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Polycrystalline silicon nanowires (poly-SiNWs) are synthesized using sidewall spacer top-down method and classical photolithography techniques. This low-temperature (≤ 600°C) fabrication process is a low cost and fully compatible with planar complementary metal oxide semiconductor (CMOS) silicon technology. Independent biasing of each gate allows a possible threshold voltage control of the bottom gate transistors (BGT) and top gate transistors (TGT). Moreover, a new gate architecture passing from 2D to 3D, surrounding-gate transistors, called Gate-All-Around (GAA) where the gate circles the nanowire channel, allows a better electrostatic gate control. Numerical modeling of dual-gate structure and simulations are performed to estimate electrons and holes concentrations in the nanowire used as active layer versus applied gate voltages. Electrical performances of top and bottom-gate transistors are analyzed highlighting oxide-semiconducting nanowire interfaces difference in top and bottom gate configurations. Finally, GAA transistors characterization show that top channel conduction dominates when bias is applied on the surrounding gate.

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“…It is a material of choice in microelectronics for the fabrication of devices needing deposition of doped silicon films. For 1 example, it is widely used in the fabrication of field effect transistors [1][2][3][4][5], solar panels [6] and diodes [7,8]. Advantageously, the polySi deposition step is manufactured by Low Pressure Chemical Vapor Deposition (LPCVD), leading to deposited layers with good homogeneity, high stability and well-controlled doping concentrations.…”

Section: Introductionmentioning

confidence: 99%

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Girard¹,

Coulon²,

Cardinaud³

et al. 2014

Applied Surface Science

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International audienceThe chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O2 plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species

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Polycrystalline Silicon Nanowires Synthesis Compatible With CMOS Technology for Integrated Gas Sensing Applications

Cited by 6 publications

References 34 publications

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors

Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors

(Invited) Dual-Gate and Gate-All-Around Polycrystalline Silicon Nanowires Field Effect Transistors: Simulation and Characterization

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

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