Polymer layers by initiated chemical vapor deposition for thin film gas barrier encapsulation

Spee, D.A.; Bakker, Reuben M.; Werf, C.H.M. van der; Steenbergen, Mies J. van; Rath, J.K.; Schropp, R.E.I.

doi:10.1016/j.tsf.2011.01.297

Cited by 17 publications

(15 citation statements)

References 11 publications

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“…This may be a result of the highly reactive atomic hydrogen present in the process. Using the FTIR measurement it was found that the epoxide group as well as the double bonded oxygen is removed from the PGMA [10]. Surprisingly, removal of the latter, supposed to be a more stable group, was found to be faster.…”

Section: Resultsmentioning

confidence: 98%

“…Radiative heating is reduced drastically in this manner and process temperatures never exceeded 100°C [9]. The PGMA layers were deposited in a homemade iCVD reactor [10], designed in cooperation with the Massachusetts Institute of Technology labs [11] after their reactor. As a monomer GMA (97%, Aldrich) was used and as an initiator tert-butylperoxide (98%, Aldrich).…”

Section: Methodsmentioning

confidence: 99%

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Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

et al. 2014

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We deposited a silicon nitride (SiNx)–polymer hybrid multilayer moisture barrier in a hot wire chemical vapor deposition (HWCVD) process, entirely below 100 °C. The polymer, poly(glycidyl methacrylate) (PGMA), was deposited by initiated chemical vapour deposition and the SiNx in a dedicated HWCVD reactor. Line profile investigation of our barrier structures by cross-sectional scanning transmission electron microscopy and energy dispersive X-ray spectrometry reveals that, upon deposition of SiNx on top of our polymer layer, an intermediate layer of silicon oxide (SiOx) like material is formed. X-ray photoelectron spectroscopy measurements confirm the presence of this material and indicate the epoxy rings in the PGMA material open upon heating (to 100 °C) and exposure to atomic hydrogen and amine species in the HWCVD process. The oxygen atoms subsequently react with silicon and nitrogen containing radicals to form SiOxNy. The interlayer turns out to be highly beneficial for interlayer adhesion and this is considered to be one of the reasons for the excellent barrier properties of our multilayer.

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Section: Resultsmentioning

confidence: 98%

Section: Methodsmentioning

confidence: 99%

Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

et al. 2014

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“…The multilayers can be easily deposited from the vapor phase because CVD techniques can be coupled to deposit inorganic (SiO x , SiN x ) and polymer layers (acrylate, silicone) sequentially. Excellent barrier properties were obtained from multilayers deposited by hotwire CVD coupled with iCVD [54][55][56][57][58] Figure 3 . a) Deposition of iPECVD polymer coating inside silicon wafer trenches.…”

Section: Discussionmentioning

confidence: 99%

Chemical Vapor Deposition for Solvent‐Free Polymerization at Surfaces

Yagüe

Coclite

Petruczok

et al. 2012

Macro Chemistry & Physics

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Chemical vapor deposition (CVD) methods are a powerful technology for engineering surfaces. When CVD is combined with the richness of organic chemistry, the resulting polymeric coatings, deposited without solvents, represent an enabling technology in many different fi elds of application. This article focuses on initiated chemical vapor deposition (iCVD), a new technique that utilizes benign reaction conditions to yield conformal and functional polymer thin fi lms. The latest achievements in coating surfaces and 3D substrates with functional materials, and the use of the technique for biotechnology and selective permeation applications are reviewed, and future directions for iCVD technology are discussed.

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“…6. On the organic layer side, stability against elevated temperatures and atomic hydrogen exposure, often present in HWCVD deposition processes, is needed [24]. This can be achieved by depositing material with large molecular weight [20] and inducing a minimal amount of defects as caused by gas phase monomer reactions.…”

Section: Compatibility Of Hwcvd and Icvd Deposited Materialsmentioning

confidence: 99%

“…This can be achieved by depositing material with large molecular weight [20] and inducing a minimal amount of defects as caused by gas phase monomer reactions. This is achieved by using low wire temperatures during iCVD deposition [24]. Moreover, sensitivity to hydrogen radicals is dependent on the molecular structure of the used monomer and the amount of cross-linking in the deposited polymer [25].…”

Section: Compatibility Of Hwcvd and Icvd Deposited Materialsmentioning

confidence: 99%

Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

2015

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Polymer layers by initiated chemical vapor deposition for thin film gas barrier encapsulation

Cited by 17 publications

References 11 publications

Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

Chemical Vapor Deposition for Solvent‐Free Polymerization at Surfaces

Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

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