2012
DOI: 10.1049/el.2011.3767
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Position dependent measurement of single event transient voltage pulse shapes under heavy ion irradiation

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Cited by 7 publications
(5 citation statements)
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“…A few papers also report on analog measurements of SET pulsewidths by directly connecting a real-time oscilloscope [51,56,49,36] . Our on-chip analog sense amplifiers [22] seem to be the first low-intrusive SET measurement attempt following the latter approach.…”
Section: Overview Of Set-related Researchmentioning
confidence: 99%
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“…A few papers also report on analog measurements of SET pulsewidths by directly connecting a real-time oscilloscope [51,56,49,36] . Our on-chip analog sense amplifiers [22] seem to be the first low-intrusive SET measurement attempt following the latter approach.…”
Section: Overview Of Set-related Researchmentioning
confidence: 99%
“…Since such information is usually only known to the manufacturer (and typically not disclosed to customers), the need arose to also calibrate and validate the 3D model. Rather than using transistor models provided in the manufacturer’s process design kits (PDK), as done in [38] , which are of questionable use for accurately calibrating the complex SET generation process, we conducted carefully controlled SET measurements [22] at the microprobe facility at the GSI [91] in Darmstadt (Germany) for this purpose. A microprobe facility allows a very accurate (sub-μm) deposition of single ions, with well-known energy, at any location on the chip.…”
Section: Fatal General Approachmentioning
confidence: 99%
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