Protection of organic light-emitting diodes over 50000 hours by Cat-CVD SiNx/SiOxNy stacked thin films

Ogawa, Y.; Ohdaira, Keisuke; Oyaidu, Takuya; Matsumura, Hideki

doi:10.1016/j.tsf.2007.06.218

Cited by 41 publications

(30 citation statements)

References 7 publications

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“…Compared to plasma enhanced chemical vapor deposition (PE-CVD), HW-CVD allows low substrate damage due to the absence of ion bombardment, low hydrogen content of the deposited material and finally conformal step coverage [7][8][9][10][11]. HW-CVD also allows low deposition temperature which is compatible with the use of polymer substrates.…”

Section: Introductionmentioning

confidence: 99%

Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

et al. 2015

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International audienceIn this work SiN x thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthal-ate (PET) substrates. First results of SiN x multilayers stacked and stacks of SiN x single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10 −3 g/m 2 day) for stacked SiN x single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiN x single-layers without Ar plasma treatment

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Section: Introductionmentioning

confidence: 99%

Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

et al. 2015

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“…Ogawa et al [12] deposited SiO x N y using SiH 4 , NH 3 and O 2 as source gases. Although the WVTR rate of single layers was found to be around 3 g/m 2 /day, the WVTR greatly improved when the SiO x N y layer was stacked upon SiN x layers.…”

Section: Inorganic Multilayer Barriersmentioning

confidence: 99%

“…3(b). Using 7 of these stacks, an OLED was coated, resulting in 1000 h without observing damage, in a 60°C and 90% RH environment [12]. A new strategy to prevent defects propagation through a barrier structure is proposed by Majee et al [13].…”

Section: Inorganic Multilayer Barriersmentioning

confidence: 99%

Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

2015

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“…Not only is this an efficient manner of depositing a three layer structure in a two-step process, it additionally provides an elegant deposition method for SiO x -like materials in a HWCVD process without using possible oxidative source gases. SiO x or SiO x N y layers have been used in other studies in addition to SiN x layers for their higher plasticity compared to SiN x , although the density (and intrinsic barrier function) of SiO x is lower than that of SiN x , it can be used to cover defects [8].…”

Section: Introductionmentioning

confidence: 99%

Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

et al. 2014

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We deposited a silicon nitride (SiNx)–polymer hybrid multilayer moisture barrier in a hot wire chemical vapor deposition (HWCVD) process, entirely below 100 °C. The polymer, poly(glycidyl methacrylate) (PGMA), was deposited by initiated chemical vapour deposition and the SiNx in a dedicated HWCVD reactor. Line profile investigation of our barrier structures by cross-sectional scanning transmission electron microscopy and energy dispersive X-ray spectrometry reveals that, upon deposition of SiNx on top of our polymer layer, an intermediate layer of silicon oxide (SiOx) like material is formed. X-ray photoelectron spectroscopy measurements confirm the presence of this material and indicate the epoxy rings in the PGMA material open upon heating (to 100 °C) and exposure to atomic hydrogen and amine species in the HWCVD process. The oxygen atoms subsequently react with silicon and nitrogen containing radicals to form SiOxNy. The interlayer turns out to be highly beneficial for interlayer adhesion and this is considered to be one of the reasons for the excellent barrier properties of our multilayer.

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Protection of organic light-emitting diodes over 50000 hours by Cat-CVD SiNx/SiOxNy stacked thin films

Cited by 41 publications

References 7 publications

Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

Moisture barrier enhancement by spontaneous formation of silicon oxide interlayers in hot wire chemical vapor deposition of silicon nitride on poly(glycidyl methacrylate)

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