Proton irradiation results of p+/n−/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor-induced space charge sign inversion

Härkönen, J.; Tuovinen, E.; Luukka, P.; Kauppinen, L.J.; Li, Z.; Moll, M.; Bates, A.; Kaska, Katharina

doi:10.1016/j.nima.2005.06.004

Cited by 25 publications

(8 citation statements)

References 21 publications

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“…[25] it was proposed to utilize this method for Si-based solar cells. Moreover, since it has been demonstrated recently that the TDs formation can be used as a technological step to fabricate detectors based on high-resistivity Cz Si [26], the hydrogen enhanced TDs process can be potentially utilized in this case as well, since this process provides a possibility to create a drift field in such material [25].…”

Section: Discussionmentioning

confidence: 99%

Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Simoen

Claeys

Rafi

et al. 2006

Materials Science and Engineering: B

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Section: Discussionmentioning

confidence: 99%

Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Simoen

Claeys

Rafi

et al. 2006

Materials Science and Engineering: B

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“…On the other hand, when processing p-type detectors (n + segmentation on boron doped bulk), it is possible to tailor by acceptor compensation the full depletion voltage of the device by deliberate introduction of TDs [13,14]. Figure 2 shows the evolution of eective doping concentration (N eff ) in silicon bulk extracted from detectors by CV method as a function of isothermal annealing time at 430…”

Section: Thermal Donor Formation In Mcz-si Detector Materialsmentioning

confidence: 99%

Development of Radiation Hard Particle Detectors Made of Czochralski Grown Silicon

Härkönen

2013

Acta Phys. Pol. A

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Tracking detectors to be used in the future high-luminosity particle physics experiments have to be simultaneously radiation hard and cost ecient. Magnetic Czochralski silicon wafers can be grown with suciently high resistivity (several kΩ cm) and well-controlled high oxygen concentration. Signicant research and development activity aiming to develop particle detectors made of high resistivity magnetic Czochralski silicon has been ongoing during the past decade. Beam test results presented in this paper show that n-type magnetic Czochralski silicon strip detectors can be operated with acceptable signal-to-noise ratio at least up to a 1 MeV neutron equivalent (neq) uence of 1 × 10. The improved radiation hardness, compared to more commonly used oat zone silicon, can be explained by the more benecial electric eld distribution inside the detector bulk. We have demonstrated a S/N of > 10 for full-size strip detectors attached to readout electronics at a uence of 1 × 10 15 neq/cm 2 . These ndings are supporting our transient current technique measurements.

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“…This includes the study of new silicon materials (e.g., Magnetic Czochralski (MCz) [7] and p-type wafers), new structures (e.g., 3D detectors [8]) or changing strip implantation to readout a signal arisen from electron collection rather than that from hole collection.…”

Section: Introductionmentioning

confidence: 99%

Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

Petterson

Hurley

Arya

et al. 2009

IEEE Trans. Nucl. Sci.

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Proton irradiation results of p+/n−/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor-induced space charge sign inversion

Cited by 25 publications

References 21 publications

Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Development of Radiation Hard Particle Detectors Made of Czochralski Grown Silicon

Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

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