Pulsed laser deposition of epitaxial silicon/<i>h</i>-Pr2O3/silicon heterostructures

Tarsa, E. J.; Speck, James S.; Robinson, McD.

doi:10.1063/1.109998

Cited by 49 publications

(22 citation statements)

References 19 publications

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“…3, Pr 2 O 3 forms two polymorphic structures, namely the hex-and the cub-Pr 2 O 3 structure. As-deposited Pr 2 O 3 layers were found to grow in the high temperature (0001) oriented hex-Pr 2 O 3 phase on Si(111) [21,42]. This preference of the high temperature hex-Pr 2 O 3 with respect to the room temperature cub-Pr 2 O 3 phase can be attributed to an epitaxial stabilization given by the far better lattice matching.…”

Section: Contributedmentioning

confidence: 95%

“…Furthermore, Synchrotron radiation X-ray diffraction was applied to study with high resolution and sensitivity the relaxation process from pseudomorphism to bulk behaviour [45]. Interestingly, the epitaxial overgrowth of the hex-Pr 2 O 3 (0001) system by Si was achieved by pulse laser deposition (PLD) [21] as well as by MBE [42]. However, a detailed structure and defect characterization of the epitaxial Si(111) layers revealed a central problem, namely the formation of stacking twins as the major defect mechanism [46].…”

Section: Contributedmentioning

confidence: 99%

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Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Schroeder

Giussani

Dąbrowski

et al. 2009

Phys. Status Solidi (c)

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Engineered Si wafer systems present an important materials science approach to further improve the performance of Si‐based micro‐ and nanoelectronics. This is due to the potential to integrate alternative semiconductor layers on the mature Si wafer technology platform which are otherwise too expensive or even impossible to grow in bulk form in the required quality and quantity. Ge is attracting increasing research interest because it is for example a promising material for high mobility channel CMOS technologies as well as a mediator material to achieve the manufacturing of III‐V/Si hybrid devices. The integration of Ge on Si wafers is today either achieved by a combination of layer transfer and wafer bonding techniques or by a sequence of subsequent, epitaxial thin film deposition growth steps. In the latter case, the traditional approach to integrate Ge layers of low defect densities is given by the use of compositionally graded SiGe heterostructures. As this approach suffers however from required SiGe buffer thicknesses on the micrometer scale, making integrated circuit processing difficult, research on the development of innovative buffer heteroepitaxy approaches is intensively pursued. A new interesting class of buffer materials with a high degree of flexibility is given by oxide heterostructures. Using the integration of single crystalline Si and Ge on the Si(111) material platform via oxide heterostructures as an example, the flexibility of engineered oxide heterostructures to control important epitaxy parameters is demonstrated. In this study, epitaxial Si(111) and Ge(111) layers were grown on cubic Y2O3(111)/cubic Pr2O3(111)/Si(111) and Pr2O3(111)/Si(111) support systems, respectively. The structural properties of the Si‐on‐Insulator (SOI) and Ge‐on‐Insulator (GOI) heterostructures were characterized in detail by a combination of laboratory‐ and synchrotron‐based methods. As main result, both the epitaxial Si(111) and Ge(111) films were shown to be atomically smooth and single crystalline (i.e. free of stacking twins). Defect engineering approaches need to be applied in future to reduce stacking faults (e.g. microtwins) which are identified as the major defect mechanism in the epitaxial Si(111) and Ge(111) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedmentioning

confidence: 95%

Section: Contributedmentioning

confidence: 99%

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Schroeder

Giussani

Dąbrowski

et al. 2009

Phys. Status Solidi (c)

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“…Fabrication of Pr 2 O 3 films on Si has been performed using molecular beam epitaxy (MBE) [14±16] and pulsed laser deposition. [17,18] Deposited Pr 2 O 3 films are potentially better than other high-k films due to the leakagecurrent densities [19] (< 10 ±8 A cm ±2 at gate voltage (V g ) = +1 V), 10 4 times lower than the observed values for HfO 2 and ZrO 2 films having the same equivalent oxide thickness of 1.4 nm. [20,21] Moreover, Osten et al [22] have reported on Pr 2 O 3 compatibility with conventional complementary metal oxide semiconductor (CMOS) processes, thus demonstrating that it is not necessary to re-engineer manufacturing procedures.…”

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confidence: 99%

A Simple Route to the Synthesis of Pr₂O₃ High‐k Thin Films

et al. 2003

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High‐quality Pr2O3 high‐k thin films with very promising electrical properties have been prepared by metal–organic chemical vapor deposition on Si(100) substrates. The most critical factor for selective and reproducible Pr2O3 film formation is the oxygen partial pressure in the reaction chamber. X‐ray (see Figure) and transmission electron microscopy diffraction patterns show that the oxide layer grows with a hexagonal random structure.

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“…The earlier physical vacuum evaporation methods adopted oxidation of the Pr metal layer. [30][31][32] Advanced methods for the fabrication of stoichiometric Pr 2 O 3 and/or PrO 2 films consist of pulsed laser deposition (PLD) [33][34][35] and molecular-beam epitaxy (MBE) [26,[36][37][38] techniques. In particular, the MBE growth of epitaxial Pr 2 O 3 films has been carried out on both Si(001) and Si (111) substrates.…”

Section: Introductionmentioning

confidence: 99%

An MOCVD Approach to High‐k Praseodymium‐Based Films

Nigro

Malandrino

Toro

et al. 2006

Chemical Vapor Deposition

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New high-k dielectric thin films have become of increasing interest over the last few years in the search for an alternative material to SiO 2 gate insulators in MOS devices. Lanthanide oxides have been studied as potential candidates for SiO 2 replacement. In this review, a description of the different CVD approaches to fabricating praseodymium oxide and silicate films with dielectric properties is presented. In particular, thermally activated and liquid-injection metal-organic (MO) CVD as well as atomic layer deposition (ALD), developed in recent years, are discussed. Examples highlighting the importance of different praseodymium precursors on the deposited phases are given. Special emphasis is placed upon deposition parameters crucial to obtain Pr 2 O 3 films and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium-containing films.

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Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures

Cited by 49 publications

References 19 publications

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

A Simple Route to the Synthesis of Pr₂O₃ High‐k Thin Films

An MOCVD Approach to High‐k Praseodymium‐Based Films

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Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures

Cited by 49 publications

References 19 publications

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

A Simple Route to the Synthesis of Pr2O3 High‐k Thin Films

An MOCVD Approach to High‐k Praseodymium‐Based Films

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Product

Resources

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A Simple Route to the Synthesis of Pr₂O₃ High‐k Thin Films