Quadruply self-aligned stacked high-capacitance RAM using Ta₂O₅high-density VLSI dynamic memory

Time Dependent, Dielectric Breakdown Characteristics of Ta2 O 5 / SiO2 Double Layers

“…However, interdiffusion can be severely reduced by a native oxide layer on the polysilicon (typically 2-3 nm thick on heavily doped material). Also, the underlying layer of poly-Si normally has to be 200-300 nm thick, otherwise dielectric degradation of the gate oxide can occur (3). The gate oxide breakdown is attributed to localized penetration of the metal in the overlying layer through weak parts of the thin polysilicon native oxide during heat-treatment.…”

“…In recent years, special attention has been paid to tantalum pentoxide (Ta20~) because it has a high dielectric constant, which can be used to promote VLSI integration (3)(4)(5)(6).…”

Dielectric properties of PZT–epoxy composite thick films

“…In the last years, various ferroelectric materials in bulk form have been intensively studied [1][2][3], and a considerable attention has recently been focused on the development of technology for their growth as thick or thin films [4][5][6], due to miniaturization requirements of electronic devices. Among all the research fields in material science, investigation of polymer-based composites is one of the most rapidly growing topics, because polymer composites are a good alternative for bulk materials due to their superior durability and flexibility.…”

Erratum to: Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

“…However, the reduction of the SiO2 insulator thickness is going to approach the physical limit in future very-large-scale integrated circuits (VLSIs). There is great interest in Ta20 5 films because of their potential applications as dielectric films to storage capacitors in memory cells and gate insulators [1][2][3] in VLSIs circuits. Although tantalum oxide has a high dielectric constant (22-28) [4][5][6], it has been considered too leaky for practical uses.…”