Remote Hydrogen Microwave Plasma Chemical Vapor Deposition of Amorphous Silicon Carbonitride (a‐SiCN) Coatings Derived From Tris(dimethylamino)Silane

Abstract

Amorphous silicon carbonitride films were produced by remote hydrogen plasma CVD (RP-CVD) from Tris(dimethylamino)silane precursor. The effect of substrate temperature (T S ) on the kinetics of RP-CVD, chemical composition, structure, surface morphology, and properties of resulting films is reported. The T S dependence of film growth rate imply that RP-CVD is an adsorption-controlled process. The increase of T S from 30 to 400 8C causes the elimination of organic moieties from the film and the formation of SiÀC and SiÀN network structure. The structure-property relationships were determined. The films deposited at T S ¼ 300 8C appear to be dense materials exhibiting very small surface roughness, high hardness, and an extremely low friction coefficient. They seem to be suitable protective coatings for metal surfaces to increase their wear strength.

Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

“…This shift occurs both at 300 and 500 K and is due to changes of the Si near environment, with carbon atoms being progressively replaced by nitrogen atoms In agreement to previous studies, the shoulder in the range of 1 000–1 100 cm −1 can be attributed to SiOSi stretching or SiCH 2 Si wagging. The main band, centered at ≈950 cm −1 , is more intense for films deposited at 500 K than for those deposited at 300 K, thus revealing higher SiC and SiN bond concentrations in the former case. Conversely, NH, CH, and SiH stretching band are less intense in films deposited at 500 K, revealing lower H concentration.…”

“…For the deconvolution analysis (using Labspec TM software) of the main FTIR absorption band, the criterion of using the lowest number of components was applied. The positions and attributions of the bands are listed in Table . Figure a shows a typical fitting for sample Si3 deposited at 300 K in the range of 1 300–600 cm −1 .…”

Films based on the phases in the Si-C-N System: Part 1. Synthesis and characterization of bis(trimethylsilyl)ethylamine as a precursor

“…At present, there are several methods for obtaining silicon carbonitride films using both physical and chemical methods of deposition. Among the latter, particular attention is given to methods which use volatile molecular precursors-organosilicon compounds such as hexamethyldisilazane (Me 3 Si) 2 NH [1,2,4,11,12,14,15], tetramenyldisilazane (Me 2 HSi) 2 NH [3,16,17], N bromohexamethyldisila zane (Me 3 Si) 2 NBr [18], (dimethylamino)dimethylsilane Me 2 NHSiMe 2 [19,20], trimethyl(diethylamino)silane Et 2 NSiMe 3 [21], bis(dimethylamino)methylsilane (Me 2 N) 2 HSiMe [9,22], bis(dimethylamino)dimethylsi lane (Me 2 N) 2 SiMe 2 [13,[23][24][25][26], tris(dimethy lamino)silane (Me 2 N) 3 HSi [27,28], dimethyl(2,2 dim ethylhydrazino)silane Me 2 HSiNHNMe 2 and dimethyl bis dimethylhydrazino silane Me 2 Si(NHNMe 2 ) 2 [29,30], bis(trimethylsilyl)carbodiimide (Me 3 Si) 2 N 2 C [4,6,31], hexamethylcyclotrisilazane (Me 2 SiNH) 3 [32][33][34][35], and 1,3 bis(dimethyl silyl) 2,2,4,4 tetrame thylcyclodisilazane (Me 2 HSiNSi) 2 [10]. At present, the effect of the structure and Si : C : N ratio in the molecule of the starting material on the properties of the SiC x N y films has been studied.…”

Bis(trimethylsilyl)Ethylamine: Synthesis, Properties and its use as CVD Precursor

“…However, as silane is a dangerous substance, both toxic and explosive, a lot of studies have been done to find new precursors to fabricate silicon carbonitride films. In a view of the literature data, SiC x N y films can effectively be produced from a number of organosilicon compounds using various chemical vapor deposition CVD techniques, such as remote plasma CVD from (dimethylamino)dimethylsilane [4], PECVD from bis(dimethylamino)dimethylsilane [10][11], remote plasma CVD from bis(dimethylamino)methylsilane [12], PECVD from bis(trimethylsilyl)carbodiimide [13], low pressure CVD, PECVD and hot wire CVD from hexamethyldisilazane [14][15][16][17], atmospheric pressure CVD from tetramethyldisilizane [18], microwave and remote plasma CVD from tris(dimethylamino)silane [19][20], PECVD from trimethylsilane [21].…”