2016
DOI: 10.1109/jssc.2016.2561966
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Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory

Abstract: A novel error correction scheme, called reset-checkreverse-flag (RCRF), is proposed to improve the reliability of storage class memories (SCMs). RCRF divides the conventional Bose-Chaudhuri-Hocquenghem (BCH) code length into multiple subsections. One flag bit is added to each subsection to correct program errors. By reversing the flag bit and user data, at least one reset error in each subsection can be recovered. A 4 Mbit carbon nanotube (CNT) based nano-random access memory (NRAM) cell array is measured to v… Show more

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Cited by 4 publications
(1 citation statement)
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“…It is mostly used in embedded systems, but an ongoing research suggest its use as a main memory [31,32]. Nano-RAM (NRAM) [33] is a carbon nanotube (CNT) based resistive NVM, with high density and endurance, compatible with existing CMOS production process. One of the recent emerging non-volatile memory technologies was introduced by Intel and Micron, named 3D XPoint memory [18,19], which technology is not publicly disclosed.…”
Section: Architectural Innovationsmentioning
confidence: 99%
“…It is mostly used in embedded systems, but an ongoing research suggest its use as a main memory [31,32]. Nano-RAM (NRAM) [33] is a carbon nanotube (CNT) based resistive NVM, with high density and endurance, compatible with existing CMOS production process. One of the recent emerging non-volatile memory technologies was introduced by Intel and Micron, named 3D XPoint memory [18,19], which technology is not publicly disclosed.…”
Section: Architectural Innovationsmentioning
confidence: 99%