Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

Llobet, Jordi; Krali, Emiljana; Wang, Chen; Arbiol, Jordi; Jones, Mervyn; Pérez‐Murano, F.; Durrani, Z. A. K.

doi:10.1063/1.4936757

Cited by 10 publications

(10 citation statements)

References 41 publications

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“…33 This result indicates that 8-nm codoped Si NCs are p-type semiconductor. In general, a transistor with a p-type quantum dot works in a negative gate voltage region (i.e., single-hole transistor 34,35 ). However, the observed Coulomb diamond in Fig.…”

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confidence: 99%

Integration of colloidal silicon nanocrystals on metal electrodes in single-electron transistor

Higashikawa

Azuma

Majima

et al. 2016

Applied Physics Letters

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We develop a facile process to integrate colloidal silicon nanocrystals (Si NCs) with metal electrodes in a single-electron transistor by self-assembly. Gold (Au) surface is modified by an amine-terminated self-assembled monolayer to have a positive potential. All-inorganic boron (B) and phosphorus (P) codoped Si NCs, with a negative surface potential and size-controllability, are selectively adsorbed on an amine-terminated Au surface by electrostatic attraction. We demonstrate the fabrication of SETs consisting of electroless-plated Au nanogap electrodes and codoped Si NCs using this process and observation of clear Coulomb diamonds at 9 K.

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confidence: 99%

Integration of colloidal silicon nanocrystals on metal electrodes in single-electron transistor

Higashikawa

Azuma

Majima

et al. 2016

Applied Physics Letters

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“…The typical resistivity of the nanowires after the annealing and doping step is 0.02 •cm. Additionally, due to the formation of silicon nanocrystals during the annealing, single electron effects can be observed, which provides additional value and potential to present fabrication method [41].…”

Section: Methodsmentioning

confidence: 99%

Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

Llobet¹,

Rius²,

Chuquitarqui³

et al. 2018

Nanotechnology

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We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

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“…Working at the above mentioned conditions the thickness of the devices is fixed at 40 nm. Supporting pillars have been defined by ion milling and lateral ion implantation to sustain the fractal resonator, in a similar way as in [37] where a suspended lateral electrode was developed for the gatebility of suspended single charged transistors. Tetramethylammonium hydroxide at 80 degree Celsius and 25% concentration has been prepared to selectively etch the non-implanted volume of silicon.…”

Section: Device and Fabricationmentioning

confidence: 99%

Multi-Frequency Resonance Behaviour of a Si Fractal NEMS Resonator

et al. 2020

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Novel Si-based nanosize mechanical resonator has been top-down fabricated. The shape of the resonating body has been numerically derived and consists of seven star-polygons that form a fractal structure. The actual resonator is defined by focused ion-beam implantation on a SOI wafer where its 18 vertices are clamped to nanopillars. The structure is suspended over a 10 μm trench and has width of 12 μm. Its thickness of 0.040 μm is defined by the fabrication process and prescribes Young’s modulus of 76 GPa which is significantly lower than the value of the bulk material. The resonator is excited by the bottom Si-layer and the interferometric characterisation confirms broadband frequency response with quality factors of over 800 for several peaks between 2 MHz and 16 MHz. COMSOL FEM software has been used to vary material properties and residual stress in order to fit the eigenfrequencies of the model with the resonance peaks detected experimentally. Further use of the model shows how the symmetry of the device affects the frequency spectrum. Also, by using the FEM model, the possibility for an electrical read out of the device was tested. The experimental measurements and simulations proved that the device can resonate at many different excitation frequencies allowing multiple operational bands. The size, and the power needed for actuation are comparable with the ones of single beam resonator while the fractal structure allows much larger area for functionalisation.

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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

Cited by 10 publications

References 41 publications

Integration of colloidal silicon nanocrystals on metal electrodes in single-electron transistor

Integration of colloidal silicon nanocrystals on metal electrodes in single-electron transistor

Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

Multi-Frequency Resonance Behaviour of a Si Fractal NEMS Resonator

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