Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology

Kobayashi, K.W.; Kumar, V.; Campbell, Carol; Chen, Shuoqi; Cao, Yu; Jiménez, José

doi:10.1109/bcicts48439.2020.9392933

Cited by 6 publications

(1 citation statement)

References 11 publications

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“…For CS topology, power consumption is higher than other CS HEMT‐based LNAs because of the higher P 1dB target. Although the chip area of LNA‐A is slightly higher than Kobayashi et al's work, 35,36 we are achieving 2 GHz more bandwidth. The chip area of LNA‐B is better than others.…”

Section: Comparisonmentioning

confidence: 54%

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

Imran Nawaz,

Zafar,

Gurdal

et al. 2024

Circuit Theory & Apps

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SummaryCascode HEMTs exhibit high gain and broadband performance. Promising reverse transmission makes matching networks simpler and insensitive to impedance on either side of the HEMT. On the other hand, common source (CS) HEMTs with intentional small inductance at the source provide simultaneous match for optimum noise and input impedance. This paper provides a performance comparison of μm cascode HEMTs‐based low‐noise amplifier and μm CS HEMTs‐based low‐noise amplifiers with specific emphasis on robustness, including survivability and reverse recovery time (RRT). Cascode LNA survives an input power of 33 dBm while CS LNA handles 30 dBm power, each having a 1 k passive limiting resistor on the gate bias line. RRT of cascode LNA is also better. Better survivability and RRT for cascode LNA are attributed to its HEMT's stacked configuration. The designs of LNAs are described, along with their small‐signal, noise, and large‐signal characteristics in the X‐band. Cascode LNA has a better input match, while CS LNA has a better output match. Gains are comparable, while CS LNA has better P1dB at higher band edge frequency. The noise figure for both LNAs is less than 1.9 dB, with CS LNA having a slight edge over cascode. This study benefits RF designers in choosing appropriate HEMT topology as per application for designing robust low‐noise amplifiers.

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Section: Comparisonmentioning

confidence: 54%

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

Imran Nawaz,

Zafar,

Gurdal

et al. 2024

Circuit Theory & Apps

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Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure

Zafar

Aras

Akoglu

et al. 2022

Int J RF Mic Comp-Aid Eng

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GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band lownoise amplifier (LNA). This NF is comparable with state-of-the-art reported works in competitive GaAs and SiGe technologies. Moreover, this is the best reported NF in X-band using GaN technology to date. Two LNAs are fabricated using in-house 0.15 μm AlGaN/GaN on the SiC HEMT process. LNA-1 has inductive source degenerated (ISD) HEMTs at both stages, while LNA-2 has ISD HEMT at the first and common source at the second stage. The significance of ISD HEMT, for the first or subsequent stages in a multi-stage design, towards NF improvement is addressed. The criticality of stability networks towards NF contribution and its design is discussed in detail. Furthermore, even-mode stability of each HEMT after complete LNA design is assured using the S-probe method in Pathwave Advanced Design Systems.

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A Reconfigurable S-/X-Band GaN MMIC Power Amplifier

Kang

Chen

2022

IEEE Microw. Wireless Compon. Lett.

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Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology

Cited by 6 publications

References 11 publications

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure

A Reconfigurable S-/X-Band GaN MMIC Power Amplifier

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