Schottky Barrier Height of Erbium Silicide on $ \hbox{Si}_{1 - x}\hbox{C}_{x}$

Alptekin, Emre; Öztürk, Mehmet C.; Misra, Veena

doi:10.1109/led.2009.2026297

Cited by 13 publications

(10 citation statements)

References 22 publications

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“…Figure 10 benchmarks the normalized peak G m of In 0:7 Ga 0:3 As devices with in situ doped raised S/D structure in this work with our previous work. 32,33) The physical HfAlO high-k thickness of In 0:7 Ga 0:3 As MOSFETs in this work and In 0:53 Ga 0:47 As MOSFETs with S/D stressors 32,33) is $19 and $15 nm, respectively. Peak G m was normalized with C ox to account for the difference in EOT.…”

Section: Device Characterization and Analysismentioning

confidence: 85%

Source/Drain Engineering for In_0.7Ga_0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Gong

Chin

Koh

et al. 2011

Jpn. J. Appl. Phys.

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In this paper, we report N-channel metal–oxide–semiconductor field-effect transistors (N-MOSFETs) featuring in situ doped raised In0.53Ga0.47As source/drain (S/D) regions. This is the first demonstration of such regrowth on an In0.7Ga0.3As channel. After SiON spacer formation, the raised In0.53Ga0.47As S/D structure was formed by selective epitaxy of In0.53Ga0.47As in the S/D regions by metal-organic chemical-vapor deposition (MOCVD). In situ silane SiH4 doping was also introduced to boost the N-type doping concentration in the S/D regions for series resistance R SD reduction. The raised S/D structure contributes to I Dsat enhancement for the In0.7Ga0.3As N-MOSFETs.

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Section: Device Characterization and Analysismentioning

confidence: 85%

Source/Drain Engineering for In_0.7Ga_0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Gong

Chin

Koh

et al. 2011

Jpn. J. Appl. Phys.

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“…ytterbium silicide [2], [24] and erbium silicide [25], [26]. However, difficulties are faced in device integration.…”

Section: A Electron Barrier Height φ B N Adjustment For N-fetsmentioning

confidence: 99%

Advanced source/drain technologies for parasitic resistance reduction

Yeo

2010

2010 International Workshop on Junction Technology Extended Abstracts

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To achieve high MOSFET drive current and speed in future technology nodes, potential bottlenecks such as high contact resistance should be resolved. In this paper, we review the technology solutions available for reducing the contact resistance between a metal silicide contact and the source/drain region. Novel approaches for reducing the electron and hole barrier heights between the metal silicide contact and the source/drain region in n-and p-FETs will be examined. Integration of these approaches in advanced device architectures will be shown.

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“…ytterbium silicide [2,18] and erbium silicide [19,20]. However, challenges are faced in integration.…”

Section: Advanced Silicides/germanosilicides For Barrier Height Tuningmentioning

confidence: 99%

Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

Yeo

2010

ECS Trans.

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Contact resistance is becoming an important limiting factor for achieving high MOSFET drive current and speed in future technology nodes. In this paper, we review the technology solutions for reducing the contact resistance between a metal silicide contact and the source/drain region.Several new approaches for decreasing the electron and hole barrier heights between the source/drain region and the silicide layer in n-FET and p-FET, respectively, will be examined. Integration of these approaches in advanced device architectures will be discussed.

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Schottky Barrier Height of Erbium Silicide on $ \hbox{Si}_{1 - x}\hbox{C}_{x}$

Cited by 13 publications

References 22 publications

Source/Drain Engineering for In_0.7Ga_0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Source/Drain Engineering for In_0.7Ga_0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Advanced source/drain technologies for parasitic resistance reduction

Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

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Schottky Barrier Height of Erbium Silicide on $ \hbox{Si}_{1 - x}\hbox{C}_{x}$

Cited by 13 publications

References 22 publications

Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Source/Drain Engineering for In0.7Ga0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Advanced source/drain technologies for parasitic resistance reduction

Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

Contact Info

Product

Resources

About

Source/Drain Engineering for In_0.7Ga_0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction

Source/Drain Engineering for In_0.7Ga_0.3As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction