Self-catalyzed Growth of InAs Nanowires on InP Substrate

Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

doi:10.1186/s11671-017-1825-2

Cited by 13 publications

(6 citation statements)

References 28 publications

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“…Especially, III-V nanomaterials, such as nanowires (NWs), have been evidently demonstrated with intriguing physical and chemical properties originating from their one-dimensional configuration 2 . In this regard, various methods have therefore been explored for the synthesis of high-quality III-V NWs, including chemical vapor deposition (CVD) 3–5 , metal-organic CVD 6,7 , laser ablation 8 and molecular beam epitaxy (MBE) 9 , etc. Among many III−V materials, ternary compounds (e.g.…”

Section: Introductionmentioning

confidence: 99%

Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

Lan

Manikandan

et al. 2019

Nat Commun

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Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline In x Ga 1 −x Sb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric In x Ga 1− x Sb (0.09 < x < 0.28) NWs on amorphous substrates with the uniform phase-purity and <110 >-orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm 2 V −1 s −1 for In 0.09 Ga 0.91 Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In 0.28 Ga 0.72 Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W −1 and external quantum efficiency of 4.8 × 10 6 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors.

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Section: Introductionmentioning

confidence: 99%

Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

Lan

Manikandan

et al. 2019

Nat Commun

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“…The nanowires have the diameter in the range of 40–100 nm and the length of several microns. A tapered shape is observed in all nanowires, which is a typical signature of surface diffusion controlled nanowire growth [14,15,16]. A magnified image of the nanowires is shown in Figure 1b.…”

Section: Resultsmentioning

confidence: 99%

Applied Stress-Assisted Growth of Single Crystal γ-Fe2O3 Nanowires

Hong

Chu

et al. 2018

Nanomaterials

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It is difficult to obtain γ-Fe2O3 nanostructures by heating iron substrate in ambient conditions because γ-Fe2O3 is less thermodynamically stable than α-Fe2O3. In this work, we synthesize γ-Fe2O3 nanowires by heating iron particles under an external force. The stacking style of iron and oxygen ions under a strong shearing stress tends to adopt the γ-Fe2O3 structure regardless of the thermodynamic restriction. These γ-Fe2O3 nanowires exhibit a clear ferromagnetic property. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) measurements confirm that γ-phase structure appears only under the applied external force during the heating period. A window of the magnitude of the external force is found to help the nanowire growth on iron particles. The growth mechanism of γ-Fe2O3 nanowires other than α-Fe2O3 under the external force is discussed and an applied stress-assisted growth model is proposed. This work presents an easy approach to produce ferromagnetic iron oxide nanowires on a large scale.

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“…3). 131 SAG SAG is a promising way to achieve position-controlled highly uniform NWs for a variety of applications including silicon photonics, NW-based topological insulators, and photovoltaics. Also, it provides an effective way to control direction.…”

Section: Kinkingmentioning

confidence: 99%