Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs

李东临,; 曾一平,

doi:10.1088/1009-1963/15/11/046

Chinese Phys.

2006

DOI: 10.1088/1009-1963/15/11/046

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Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs

李东临李东临¹,

曾一平曾一平²

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Cited by 8 publications

References 23 publications

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Studying on source/drain contact resistance reduction for InP-based HEMT

Zeng

et al. 2015

Microw. Opt. Technol. Lett.

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In this letter, Ti/Pt/Au metal system has been investigated for the source/drain contact of MHEMT, the Ti/Pt/Au contact exhibits good ohmic contact characteristics with well thermal stability in the temperature range from 280 to 340°C. To further optimize the contact resistance, different metal deposition methods and contact layers are experimentally investigated. With sputtering Pd as an interlayer between Ti/Pt/Au and n+‐InGaAs, the specific contact resistivity is further reduced to 3.51 × 10−5 Ω cm2. Meanwhile, by adopting this metal contact system, the MHEMT shows good DC and RF characteristics, including full channel current of 75 mA/mm, extrinsic maximum transconductance gm.max of 96 ms/mm, unity current gain cutoff frequency fT of 60 GHz and maximum frequency of oscillation fmax of 156 GHz. These good electrical characteristics demonstrate that this metal contact system is beneficial for the performance improvement of MHEMT. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:217–221, 2016

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Studying on source/drain contact resistance reduction for InP-based HEMT

Zeng

et al. 2015

Microw. Opt. Technol. Lett.

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Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

Zhang

Zeng

2010

Journal of Applied Physics

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The influences of channel layer width, spacer layer width, and δ-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the Schrödinger and Poisson equations with both the strain and nonparabolicity effects being taken into account. The results show that, having little influence on the total two dimensional electron gas (2DEG) concentration in the channel, the HEMT’s channel layer width has some influence on the electron mobility, with a channel as narrow as 100–130 Å being more beneficial. For the AlSb/InAs HEMT with a Te δ-doped layer, the 2DEG concentration as high as 9.1×1012 cm−2 can be achieved in the channel by enhancing the δ-doping concentration without the occurrence of the parallel conduction. When utilizing a Si δ-doped InAs layer as the electron-supplying layer of the AlSb/InAs HEMT, the effect of the InAs donor layer thickness is studied on the 2DEG concentration. To obtain a higher 2DEG concentration in the channel, it is necessary to use an InAs donor layer as thin as 4 monolayer. To test the validity of our calculation, we have compared our theoretical results (2DEG concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.

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High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry

Chen

Zhao

Xin³

2015

Chinese Phys. Lett.

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Single and dual 𝛿-doped GaAs/AlGaAs two-dimensional electron gas (2DEG) Hall devices for low magnetic field detection at room temperature are prepared. The sensitivity and noise spectrum of the Hall devices are measured for evaluating the signal-to-noise ratio performance. It is observed that the dual 𝛿-doped Hall devices achieve a minimum detectable magnetic field as low as 303 nT, which is better than the single 𝛿-doped Hall device prepared under the same growth condition.

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Self-consistent analysis of double-δ-doped InAlAs/InGaAs/InP HEMTs

Cited by 8 publications

References 23 publications

Studying on source/drain contact resistance reduction for InP-based HEMT

Studying on source/drain contact resistance reduction for InP-based HEMT

Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry

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