Si1−xGex/Si multi-quantum well phototransistor for near-infrared operation

Pei, Zingway; Lai, Li-Shyue; Hwang, Hann-Ping; Tseng, Y.T.; Liang, Chao‐Chiun; Tsai, M. J.

doi:10.1016/s1386-9477(02)00645-8

Cited by 7 publications

(3 citation statements)

References 5 publications

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“…The carbon-doped or undulating growth technique can also be applied in the SL to further increase its critical thickness [23], [25], [26], [34]. The composition of the simulated SL is Si Ge -Si to achieve an appropriate value of the optical absorption constant (100 cm ) in the long-wavelength regime ( 1.3 m) [17], [26]. In traditional separate-absorption-charge-multiplication (SACM) APDs, the photoabsorption layers are lightly and uniformly doped.…”

Section: Device Structurementioning

confidence: 99%

“…The modeled epilayer structures of APDs are Si-based with an SiGe-Si superlattice (SL) photoabsorption layer for telecommunication wavelength (1. 3 1.55 m) applications [17], [18]. Conventional Si-based APDs exhibit much lower multiplication noise, shorter multiplication time, and larger gain-bandwidth product [7], [8], [19] than III-V-based APDs, because Si has very dissimilar electron ( ) and hole ( ) impact ionization coefficients, and the ratio (…”

mentioning

confidence: 99%

“…Recently, several research groups have demonstrated the excellent noise and gain-bandwidth-product (GBP) performance of In-GaAs-Si-heterostructure-based APDs by using a wafer-bonding technique in the long-optical-communication-wavelength regime [7], [8], [19]. The incorporation of the SiGe alloy on the Si substrate is another way to achieve long-wavelength absorption in Si-based photodetectors [17], [18], [20]- [26]. However, the demonstrated quantum efficiency of these photodetectors is much lower than the reported values of III-V-based photodetector's due to the relatively small photoabsorption constant of the strained SiGe alloy and the critical thickness constraint.…”

mentioning

confidence: 99%

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Design and Analysis of Separate-Absorption-Transport-Charge-Multiplication Traveling-Wave Avalanche Photodetectors

Shi

Liu

2004

J. Lightwave Technol.

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This paper proposes a novel type of avalanche photodiode-the separate-absorption-transport-charge-multiplication (SATCM) avalanche photodiode (APD). The novel design of photoabsorption and multiplication layers of APDs can avoid the photoabsorption layer breakdown and hole-transport problems, exhibit low operation voltage, and achieve ultra-high-gain bandwidth product performances. To achieve low excess noise and ultra-high-speed performance in the fiber communication regime (1.3 1.55 m), the simulated APD is Si-based with an SiGe-Si superlattice (SL) as the photoabsorption layer and traveling-wave geometric structures. The frequency response is simulated by means of a photo-distributed current model, which includes all the bandwidth-limiting factors, such as the dispersion of microwave propagation loss, velocity mismatch, boundary reflection, and multiplication/transport of photogenerated carriers. By properly choosing the thicknesses of the transport and multiplication layers, microwave propagation effects in the traveling-wave structure can be minimized without increasing the operation voltage significantly. A near 30-Gb/s electrical bandwidth and 10 avalanche gain can be achieved simultaneously, even with a long device absorption length (150 m) and low operation voltage ( 12 V). In addition, the ultrahigh output saturation power bandwidth product of this simulated TWAPD structure can also be expected due to the large photoabsorption volume and superior microwave-guiding structure. Index Terms-Avalanche photodetector, avalanche photodiode (APD), high gain-bandwidth-product avalanche photodetector, high-saturation-power photodetector, Si-SiGe-based photodetector, Si-SiGe-based superlattice (SL), traveling-wave photodetector, ultra-high-speed photodetector. I. INTRODUCTIONT HE rapid growth in Internet traffic has created an urgent need to increase the channel bandwidth capacity of fiber-optic communication systems. As a key component in these transmission systems, ultra-high-speed photodetectors are able to not only increase the transmission capability in a single channel, but also reduce the required number of channels and complexity of management in a wavelength-division-multiplexing (WDM) fiber communication system [1]. There

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