SiC power devices for Smart Grid systems

Palmour, John W.; Zhang, J. Q.; Das, Mrinal K.; Callanan, Robert; Agarwal, Anmol; Grider, David

doi:10.1109/ipec.2010.5542027

Cited by 37 publications

(20 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…While the performance of silicon-based power semiconductor devices have improved over the past several decades resulting in tremendous improvements in efficiency, size, weight, and power density of power electronic systems, these devices are rapidly approaching the fundamental material limits of silicon. This has resulted in a rapid expansion of efforts to develop wide-bandgap power semiconductor alternatives utilizing SiC [2] and GaN [3]- [8].…”

Section: Introductionmentioning

confidence: 99%

3.7 kV Vertical GaN PN Diodes

Kizilyalli

Edwards

Nie

et al. 2014

IEEE Electron Device Lett.

129

View full text Add to dashboard Cite

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (10 4 cm −2 ) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (R sp ) of 2.95 m -cm 2 .

show abstract

Section: Introductionmentioning

confidence: 99%

3.7 kV Vertical GaN PN Diodes

Kizilyalli

Edwards

Nie

et al. 2014

IEEE Electron Device Lett.

129

View full text Add to dashboard Cite

show abstract

“…A 600-V 10-A SiC-based fieldeffect transistor (FET) has on-state resistance of approximately 0.8 Ω at 200 • C [63]. The high-voltage SiC FETs have already used as alternatives to insulated-gate bipolar transistors (IGBTs) in power system applications [61], [62]. Current emphasis is on replacing Si-based active components (switches and diodes) with their SiC counterparts in charging applications, front-end rectifiers, motor inverters, and modularizing SiC-based FETs along with their gate drivers.…”

Section: A Sic Devicesmentioning

confidence: 99%

Comprehensive Topological Analysis of Conductive and Inductive Charging Solutions for Plug-In Electric Vehicles

Khaligh

Düşmez

2012

IEEE Trans. Veh. Technol.

533

160

View full text Add to dashboard Cite

The impending global energy crisis has opened up new opportunities for the automotive industry to meet the everincreasing demand for cleaner and fuel-efficient vehicles. This has necessitated the development of drivetrains that are either fully or partially electrified in the form of electric and plug-in hybrid electric vehicles (EVs and HEVs), respectively, which are collectively addressed as plug-in EVs (PEVs). PEVs in general are equipped with larger on-board storage and power electronics for charging or discharging the battery, in comparison with HEVs. The extent to which PEVs are adopted significantly depends on the nature of the charging solution utilized. In this paper, a comprehensive topological survey of the currently available PEV charging solutions is presented. PEV chargers based on the nature of charging (conductive or inductive), stages of conversion (integrated single stage or two stages), power level (level 1, 2, or 3), and type of semiconductor devices utilized (silicon, silicon carbide, or gallium nitride) are thoroughly reviewed in this paper.Index Terms-Electric vehicles (EVs), inductive charging, plug-in hybrid electric vehicles (PHEVs), power electronics, wide-bandgap semiconductor devices.

show abstract

“…AUGN and AUGP are recombination constants with values 5.0 Â 10 À31 and 2.0 Â 10 À31 , respectively [17]. The device considered in the simulation is a 4H-SiC IGBT trench structure because of recent progress in the development of SiC IGBT devices and models [18][19][20]. The full structure is shown in Fig.…”

Section: Structural Defects In the 4h-sic Substratementioning

confidence: 99%