Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Jouha, Wadia; Oualkadi, Ahmed El; Dherbécourt, Pascal; Joubert, Eric; Masmoudi, Mohamed

doi:10.1109/tpel.2018.2822939

Cited by 35 publications

(23 citation statements)

References 17 publications

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“…This not only allows accurate scaling to alternate chip dimensions but also enables design optimization by linking the time domain performance to the manufacturing process within SPICE [29]. In [30], Jouha et al extend the McNutt model, originally presented in [31], via a channel length modulation term (λ). Additionally, the parameter extraction accuracy is improved via the Levenberg-Marquardt (L-M) optimization algorithm.…”

Section: A Recent Physics Modelsmentioning

confidence: 99%

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Nelson

Lemmon

Jimenez

et al. 2020

IEEE Open J. Power Electron.

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Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC MOSFET models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design.

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Section: A Recent Physics Modelsmentioning

confidence: 99%

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Nelson

Lemmon

Jimenez

et al. 2020

IEEE Open J. Power Electron.

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“…The modelling of the MOSFET behaviour must consider the physical parameters variations. For this purpose, we use a compact model that describes the SiC power MOSFETs behaviour depending on the materials properties and the impact of temperature [22]. The model describes the drain-source current I ds in two operating regions by the following equations:…”

Section: Description Of the Compact Modelmentioning

confidence: 99%

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Jouha

Oualkadi

Dherbécourt

et al. 2020

IET Circuits, Devices & Systems

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In this study, the authors aim at investigating the static electro-thermal behaviour of two new generations of power silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs). The studied devices are commercialised and have a vertical structure. Two approaches are followed: device modelling and physical simulation. An improved compact model based on an accurate method of parameters extraction is introduced. The simulation results obtained with this method perfectly fit the measurements. The parameters extracted precisely from the model (threshold voltage, saturation region transconductance and transverse electric field parameter) are used to accurately analyse the static behaviour of 1200 V Gen 2 and 900 V Gen 3 SiC MOSFETs. Physical simulation is conducted to understand the impact of the temperature and the physical parameters on the threshold voltage and the on-state resistance.

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“…Tc1, TC2, TC3 and Tc4 are temperature coefficients. These parameters are extracted by using the Levenberg-Marquardt algorithm [27] as shown in Table 1.…”

Section: Modeling Temperature Dependencymentioning

confidence: 99%

Temperature Effects of GaN HEMTs on the Design of Power Converters

Bouchour

Dherbécourt

Latry³

et al. 2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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This paper proposes an experimental study of temperature effects on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer characteristics are monitored at temperatures ranging from 5°C to 105°C. The temperature dependency on static parameters of GaN HEMT is examined, such as: drain current (IDS), on-state resistance (RDS(ON)), transconductance (gm), threshold voltage (VTH) and the gate leakage current (IGSS). The decreases of IDS and gm accompanied with the increase of RDS(ON) and IGSS when increasing temperature have been observed. Moreover, the decrease in electron mobility with increasing temperatures is considered to be one of the causes of the reduction in the drain current and transconductance. In order to study the impact of temperature on power converters with GaN HEMTs by simulation approach, the thermal characteristics of a 650V, 30A GaN HEMT have been modelled. The used model is a nonsegmented Electro-thermal SPICE model of Motorola. The model parameters are extracted using Levenberg-Marquardt Algorithm.

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Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

Cited by 35 publications

References 17 publications

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Temperature Effects of GaN HEMTs on the Design of Power Converters

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