Silicon MOS transconductance scaling into the overshoot regime

Pinto, M.R.; Sangiorgi, E.; Bude, J.

doi:10.1109/55.225584

Cited by 52 publications

(20 citation statements)

References 22 publications

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“…11). The result, which is consistent with the findings in an earlier report of hydrodynamic calculations that varied low-field mobility as a parameter [9], shows that although enhanced low-field mobility does increase of deep submicron devices, the influence diminishes with decreasing channel lengths. More importantly, the results indicate that the improvement in low-field mobility alone does not explain the enhancement in the short-channel strained Si device performance.…”

Section: Analysis Of Enhanced Electron Transportsupporting

confidence: 92%

“…be fit to the velocity-field and energy-field relations to find [9], [18], [25], [27]: (6) Fig . 10 shows the estimated , obtained in this way, as a function of average electron energy and strain-induced energy splitting .…”

Section: Analysis Of Enhanced Electron Transportmentioning

confidence: 99%

“…Simulation studies indicate that increased low-field mobility improves the transconductance of Si MOSFET's, even at 0.1 m channel length, although the impact of low-field mobility diminishes with decreasing channel length [9]. If strain can enhance the high-field transport properties of Si in addition to the low-field mobility, device performance improvements that are even greater may be possible.…”

mentioning

confidence: 99%

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Fabrication and analysis of deep submicron strained-Si n-MOSFET's

Rim

Hoyt

Gibbons

2000

IEEE Trans. Electron Devices

349

134

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Abstract-Deep submicron strained-Si n-MOSFET's were fabricated on strained Si/relaxed Si 0 8 Ge 0 2 heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices is enhanced by 75% compared to that of the unstrained-Si control devices and the state-of-the-art universal MOSFET mobility. Although the strained and unstrained-Si MOSFET's exhibit very similar short-channel effects, the intrinsic transconductance of the strained Si devices is enhanced by roughly 60% for the entire channel length range investigated (1 to 0.1 m) when self-heating is reduced by an ac measurement technique. Comparison of the measured transconductance to hydrodynamic device simulations indicates that in addition to the increased low-field mobility, improved high-field transport in strained Si is necessary to explain the observed performance improvement. Reduced carrier-phonon scattering for electrons with average energies less than a few hundred meV accounts for the enhanced high-field electron transport in strained Si. Since strained Si provides device performance enhancements through changes in material properties rather than changes in device geometry and doping, strained Si is a promising candidate for improving the performance of Si CMOS technology without compromising the control of short channel effects.

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Section: Analysis Of Enhanced Electron Transportsupporting

confidence: 92%

Section: Analysis Of Enhanced Electron Transportmentioning

confidence: 99%

mentioning

confidence: 99%

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Fabrication and analysis of deep submicron strained-Si n-MOSFET's

Rim

Hoyt

Gibbons

2000

IEEE Trans. Electron Devices

349

134

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“…The close correspondence of eqns (9) and (10), even though they are based on much different physics, helps to explain the success of the DD model. Because the near-equilibrium mobility is an important 'calibration' parameter for simulation programs [12], it is important that a simulation program produce accurate currents as the mobility is varied. In particular, as the critical device dimension, , shrinks below a mean-free-path, the current should approach the ballistic limit.…”

Section: Discussionmentioning

confidence: 99%

Simulation of nanoscale MOSFETs: a scattering theory interpretation

Ren

Lundstrom

2000

Superlattices and Microstructures

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“…First, it was shown that retrograde profiles are essential in maintaining subthreshold slopes with decreasing channel length [3]. Second, it was shown that even in the 100 nm channel length regime, transconductance will continue to increase with both channel length scaling and increased effective mobility [4]- [6]. To maximize the effective mobility at a given channel length, the channel doping profile should be optimized to produce the highest effective mobility values while maintaining acceptable short-channel effects and threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Channel profile engineering for MOSFET's with 100 nm channel lengths

Jacobs

Antoniadis

1995

IEEE Trans. Electron Devices

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Abstruct-Effective inversion electron mobility and several short-channel effects are examined for different channel doping profiles in NMOSFET's with L , f f near 100 nm using device simulators. For given threshold voltage, the effective mobility depends on the doping profile shape when the ionized dopant impurity scattering near the surface is nonnegligible as may be the case with the high doping required for proper scaling to L , f f 5 100 nm. In this regime, super-steep retrograde profiles result in higher effective mobility values than conventional step doping profiles while allowing deeper draidsource junctions.

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Silicon MOS transconductance scaling into the overshoot regime

Cited by 52 publications

References 22 publications

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

Simulation of nanoscale MOSFETs: a scattering theory interpretation

Channel profile engineering for MOSFET's with 100 nm channel lengths

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