Simulation and Analysis of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

Junqin, 张军琴 Zhang; Yintang, 杨银堂 Yang; Yan, 卢艳 Lu; Lifei, 娄利飞 Lou; Yan, 赵妍 Zhao

doi:10.3788/cjl20083504.0509

Cited by 4 publications

(1 citation statement)

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“…In recent years, It has been made great progress in reseaches of ultraviolet light (UV) charge-coupled device (CCD), which can be widely used in military, industrial and civil fields [1]. But most of them are based on Silicon.…”

Section: Introductionmentioning

confidence: 99%

A feasibility study on SiC optoinjected charge-coupled devices

Chen

2012

2012 IEEE International Conference on Mechatronics and Automation

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The feasibility of SiC optoinjected Buried Charge-Coupled Devices has been studied by means of computer simulation. The transfering and the signal charge storage characteristics of the devices have been demonstrated. For a device with optimized structure parameters, the stored electron number per unit area is up to ~ 1.746×10 11 cm -2 and the stored electron is 2.262×10 7 electron. The device reaches the highest response at the wavelength of 290 nm, and it can work stably in wave range of 200 nm ~ 290 nm. Therefore it will be beneficial to the detection of solar-blind region. Device can detect a ultraviolet light with power density as low as 0.001 mW/cm 2 and area density of the stored electrons is 1.592×10 10 cm -2 when light power density is changed.

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Section: Introductionmentioning

confidence: 99%

A feasibility study on SiC optoinjected charge-coupled devices

Chen

2012

2012 IEEE International Conference on Mechatronics and Automation

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The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors

Zhang

Yang

Jia

et al. 2012

2012 International Conference on Computer Science and Information Processing (CSIP)

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The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V), capacitance voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is 1.24xlO-8A at 4V bias, and the average capacitance is 82.66pF at 0-5V voltage range. The spectral response range is from 250nm to 350nm wavelength, and the highest responsivity appears at the wavelength of 280nm. The results indicate that the 4H-SiC photodetectors are visible-blind. Keywords-4H-SiC; ultraviolet(UV) photodetector; metal semiconductor-metal (MSM) I.

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