Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers

Cai, Yuanjing; Zhu, Chenqi; Jiu, L.; Gong, Y.; Yu, Xingwen; Bai, J.; Esendag, Volkan; Wang, Tao

doi:10.3390/ma11101968

Cited by 13 publications

(12 citation statements)

References 26 publications

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“…Recently, a new class of engineered substrates with poly-AlN has been introduced [268]- [271]. The main advantage of these substrates is their coefficient of thermal expansion (CTE) matched to GaN and thus enabling the growth of thick, high-quality stress-free GaN with lower defect density as compared to GaNon-Si substrates [30,102]. Thus, the future for GaN-on-Si vertical devices seems very promising.…”

Section: In-situ Oxide Gan Interlayer-based Vertical Trench Mosfet (O...mentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

342

126

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Over the last decade, gallium nitride has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available on the market, GaN has the widest energy gap, the largest critical field, the highest saturation velocity, thus representing an excellent material for the fabrication of high speed/high voltage components.The presence of spontaneous and piezoelectric polarization allows to create a 2-dimensional electron gas, with high mobility and large channel density, in absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable high frequency operation, with consequent advantages in terms of miniaturization.For high power/high voltage operation, vertical device architectures are being proposed and investigated, and 3-dimensional structuresfin-shaped, trench-structured, nanowire-basedare demonstrating a great potential. Contrary to silicon, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This tutorial paper describes the physics, technology and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail, to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN, and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight on the most relevant aspects gives the reader a comprehensive overview on present and next-generation GaN electronics. IntroductionOver the past decade, gallium nitride has emerged as an excellent material for the fabrication of power semiconductor devices. Thanks to the unique properties of GaN, diodes and transistors based on this material have excellent performance, compared to their silicon counterparts, and are expected to find wide application in the next-generation power converters. Owing to the flexibility and the energy efficiency of GaN-based power converters, the interest towards this technology is rapidly growing: the aim of this tutorial is to review the most relevant physical properties, the operating principles, the fabrication parameters, and the stability/reliability issues of GaN-based power transistors. For introductory purposes, we start summarizing the physical reasons why GaN transistors achieve a much better performance than the corresponding silicon devices, to help the reader understanding the unique advantages of this technology.The properties of GaN devices allow the fabrication of high-efficiency (near or above 99 %)...

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Section: In-situ Oxide Gan Interlayer-based Vertical Trench Mosfet (O...mentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

342

126

View full text Add to dashboard Cite

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“…However, thanks to the benefits of wide band gap technology, some of these challenges will soon be overcome if more research goes into solving the respective problems. Recently, the field of power electronic devices has awakened to the wide band gap technology and this has resulted in the birthing of the high electron mobility transistors (HEMTs) [ 149 , 150 , 151 , 152 , 153 , 154 , 155 , 156 , 157 , 158 , 159 , 160 , 161 , 162 , 163 , 164 , 165 , 166 , 167 , 168 , 169 , 170 ]. These transistors, mostly MOSFETs and IGBTs, are made from materials such as silicon carbide (SiC), gallium nitride (GaN), indium phosphide (InP), aluminum gallium nitride (AlGaN), etc.…”

Section: Discussionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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“…However, compared with Sample A, higher brightness and more uniformly distributed light occur on the entirety of Sample B, which can mainly be attributed to the multi-layer stacked n-AlGaN/u-GaN structure. Due to the energy band discontinuity and polarization effect, channels are formed at the AlGaN/GaN heterojunction interface, where a large number of electrons will accumulate, thereby converting the electronic bulk transport into quasi-two-dimensional transport and promoting uniform current spreading [32,33]. Additionally, because ionized impurities in the materials have a scattering effect on carriers and thus reduce carrier mobility, the undoped GaN layer in the multi-layer stacking structure allows for higher electron mobility than the traditional n-AlGaN layer, which will enhance the current spreading capability of the devices.…”

Section: Methodsmentioning

confidence: 99%

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes

Wang

Zhang

et al. 2020

Materials

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To obtain excellent current spreading performance of ultraviolet light-emitting diodes (UVLEDs), a 60-period stacked Si modulation-doped n-AlGaN/u-GaN structure is proposed to replace the traditional n-AlGaN structure. The high-resolution X-ray diffraction ω-scan rocking curves show that the periodic growth of AlGaN and GaN layers plays a positive role in reducing dislocation density. Compared with the conventional UV light-emitting diodes (LEDs), light emission micrographs of devices with a multi-layer stacked n-AlGaN/u-GaN structure reveal higher brightness and a more uniform distribution. In addition, the output power and external quantum efficiency under a 20-mA injection current are increased by 22% and 26.5%, respectively. Experimental and simulation results indicate that a multi-layer stacking structure can alleviate the current crowding effect in four ways:(1) a reduction in dislocation density; (2) replacement of quasi-two-dimensional electron transport with electronic bulk transport to enhance electron mobility; (3) an increase in electron concentration without improving the impurity concentration; and (4) a weakening of the electron scattering effect by reducing the impurity concentration.

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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers

Cited by 13 publications

References 26 publications

GaN-based power devices: Physics, reliability, and perspectives

GaN-based power devices: Physics, reliability, and perspectives

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes

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