Structural and Electrical Properties of High-k HoTiO₃ Gate Dielectrics

Abstract

We developed a high-k HoTiO3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO3 dielectrics annealed at 800oC exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO3 structure and composition.

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

“…Figure6depicts the deconvoluted peaks of Ho 4d narrow scan for various oxidation/nitridation durations 5, 10, 15, and 20 minutes. The reference peak position of Ho 2 O 3 in the Ho 4d spectra was reported at 161.8 eV 31,46. It is clearly visible that the centroid peak of Ho 4d shifts negatively towards the lower binding energy by 1.07, 0.66, 0.87, and1.17 eV, respectively for 5, 10, 15, and 20 minutes with respect to the reference position of Ho 2 O 3 .…”

Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures

“…Traditional gate dielectric silicon dioxide (SiO 2 ) has reached its physical limits due to the gradual decrease of the complementary metal oxide silicon (CMOS) transistor dimensions and the increase in leakage current has become an important problem. Researchers have suggested high-k dielectrics as a solution to this problem [1,2]. Developments in high-k MOS-based devices are also desired to be transferred to dosimeter technology so that RadFET radiation sensors can read doses lower than 10 mGy with high accuracy and become more resistant to high radiation field [3][4][5].…”