Structural properties of AlN films grown on Si, Ru/Si and ZnO/Si substrates

ZnO/AlN/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient

“…The X-ray diffraction (XRD) rocking curve shows a FWHM of 1.8° that is very low compared to results obtained in other works from AlN films synthesised by magnetron sputtering [13][14][15] .…”

Low wet etching rates of ZnO films prepared by sputtering of mixed ZnO and AlN powder targets

“…No Al-compounds were detected in the XRD measurements, suggesting that these Al-compounds are amorphous or nanocrystals. In the codoped ZnO films, the segregated AlN can grow epitaxially on the surfaces of ZnO particles because AlN and ZnO have the same Wurtzite crystal structure [20,21]. The deposition of the AlN films in the lateral direction may induce the anisotoropic crystal growth, as seen in Fig.…”

Flexible Surface Acoustic Wave Device with AlN Film on Polymer Substrate

“…The strain and crystallite size of the thin film were extracted from the XRD data by the standard method. Strain is calculated from ε z = (c − c 0 )/c 0 [7], where c 0 is the strain-free lattice parameter (4.979Å) and the lattice constant c is equal to twice the interplanar spacing d, measured from the position of the (002) peak using Braggequation. Crystallite sizes were calculated from the DebyeSherrer formula [8]:…”