SU-8 for real three-dimensional subdiffraction-limit two-photon microfabrication

Teh, W. H.; Dürig, U.; Salis, G.; Harbers, Rik; Drechsler, Ute; Mahrt, Rainer F.; Smith, C. G.; Güntherodt, H.‐J.

doi:10.1063/1.1753059

Cited by 104 publications

(61 citation statements)

References 10 publications

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“…4, a point approximately at the center of the shaded region ͑P =24 mW, v =2 m/s͒ corresponds to a timeaveraged dose of 2.88 MJ/ cm 2 , which is also averaged over the area of the test structure. The laser powers and writing speeds are comparable to those used by Teh et al 11 at room temperature so there is clearly a broad process window in which TPA photolithography can be used successfully.…”

supporting

confidence: 52%

“…9 Furthermore, room-temperature TPA laser photolithography with SU-8 has been studied in detail. 4,10,11 The samples consisted of 1 m thick MicroChem Nano SU-8 2025 photoresist ͑diluted one part Nano SU-8 2025 is to two parts cyclopentanone͒ spin coated over a 60 nm tungsten film on a GaAs substrate. After application of the SU-8 the sample was baked at 95°C for 2 min.…”

mentioning

confidence: 99%

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Cryogenic two-photon laser photolithography with SU-8

Lee

Green

Taylor

et al. 2006

Applied Physics Letters

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We have shown that photolithography can be used to create alignment markers on a semiconductor substrate at cryogenic temperatures. The epoxy resist SU-8 can be exposed effectively by two-photon absorption at a temperature of 4K. By this means a spectroscopy apparatus can be used to find the positions of randomly distributed structures at low temperatures, such as InGaAs∕GaAs quantum dots, and mark their positions. We present a systematic study of the optical exposure parameters for cryogenic two-photon laser photolithography with SU-8.

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supporting

confidence: 52%

mentioning

confidence: 99%

Cryogenic two-photon laser photolithography with SU-8

Lee

Green

Taylor

et al. 2006

Applied Physics Letters

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“…In addition to lateral and axial positioning, the parameters controlled include incident intensity and write speed. Potential substrates require varying doses of laser radiation to reach their respective patterning thresholds making power adaptability paramount [20,21]. The laser source is adjustable from 0.0 -2.7 W, however, exposure can be further modified by adjusting the frame rate of the holograms displayed to dictate the write speed.…”

Section: Manufacturing Proceduresmentioning

confidence: 99%

Three-dimensional parallel holographic micropatterning using a spatial light modulator

Jenness¹,

Wulff²,

Johannes³

et al. 2008

Opt. Express

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We present a micropatterning method for the automatic transfer and arbitrary positioning of computer-generated three-dimensional structures within a substrate. The Gerchberg-Saxton algorithm and an electrically addressed spatial light modulator (SLM) are used to create and display phase holograms, respectively. A holographic approach to light manipulation enables arbitrary and efficient parallel photo-patterning. Multiple pyramidal microstructures were created simultaneously in a photosensitive adhesive. A scanning electron microscope was used to confirm successful replication of the desired microscale structures.

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“…As each spot exposes the photoresist, the beam write time or exposure intensity is adjusted to control the dose and achieve variable-relief structures. Finally, 2-photon microsterolithography [19,[24][25][26] While the above lithographic techniques enable realization of a wider variety of structures compared to multiple-exposure photolithography, longer fabrication times and the need for specialized equipment makes this technology less applicable when high throughput is required.…”

Section: Direct-write Photolithographymentioning

confidence: 99%

Double-Exposure Grayscale Photolithography

Mosher

Waits

Morgan

et al. 2009

J. Microelectromech. Syst.

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Three-dimensional (3D) photoresist structures may be realized by controlling the transmitted UV light intensity in a process termed gray-scale photolithography.Light modulation is accomplished by diffraction through sub-resolution pixels on a photomask. The number of photoresist levels is determined by the number of different pixel sizes on the mask, which is restricted by mask fabrication. This drawback prevents the use of gray-scale photolithography for applications that need a high vertical resolution.The double-exposure gray-scale photolithography technique was developed to improve the vertical resolution without increasing the number of pixel sizes. This is achieved by using two gray-scale exposures prior to development. The resulting overlay produces an exposure dose that is a combination of both exposures.Calibration is utilized to relate the pixel sizes and exposure times to the photoresist height. This calibration enables automated mask design for arbitrary 3D structures and investigation of other effects, such as misalignment between the exposures.

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SU-8 for real three-dimensional subdiffraction-limit two-photon microfabrication

Cited by 104 publications

References 10 publications

Cryogenic two-photon laser photolithography with SU-8

Cryogenic two-photon laser photolithography with SU-8

Three-dimensional parallel holographic micropatterning using a spatial light modulator

Double-Exposure Grayscale Photolithography

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