19th International Conference on VLSI Design Held Jointly With 5th International Conference on Embedded Systems Design (VLSID'0 2006
DOI: 10.1109/vlsid.2006.155
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Techniques for on-chip process voltage and temperature detection and compensation

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Cited by 15 publications
(2 citation statements)
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“…These hazards will become even worse if the nanomerer CMOS technology is used and PVT variations appear [13][14][15][16]. However, most of the prior designs did not consider the slew rate deviation caused by the PVT variation [17][18][19][20][21][22]. In fact, PVT variations have been proved to affect the slew rate of the output buffer severely, as shown in Fig.…”
Section: Introductionmentioning
confidence: 99%
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“…These hazards will become even worse if the nanomerer CMOS technology is used and PVT variations appear [13][14][15][16]. However, most of the prior designs did not consider the slew rate deviation caused by the PVT variation [17][18][19][20][21][22]. In fact, PVT variations have been proved to affect the slew rate of the output buffer severely, as shown in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, many recent works have been proposed to enhance the capability against PVT variation and enlarge the acceptable envelope as much as possible to elevate the yield. Though delay-based methods have been widely utilized to the detect PVT variation [18,23], those methods can only recognize three corners, i.e., TT, FF, and SS. The FS and SF corners were left unsolved in these works.…”
Section: Introductionmentioning
confidence: 99%