The Effect of High Temperature Anneal on Electrical Stress‐Generated Defects in Metal Oxide Semiconductor Structures

Berger, M.; Schwartsglass, Offer; Shappir, J.

doi:10.1149/1.2055075

Cited by 6 publications

(4 citation statements)

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“…The extrapolated trap generation data can then be coupled with the statistical models of breakdown to predict breakdown at low voltages [48][49]. The field dependence of trap generation has been the subject of continuing investigation [478,481,540,559,568,573,577,581,613,638,658,[707][708][709][710][711][712]. The trap generation has been measured in oxides between 5 nm and 13.5 nm thick [559,568,573,581] using the decay-of-tunneling-current technique [531].…”

Section: Oxide Trap Generationmentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2002

Oxide Reliability

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Section: Oxide Trap Generationmentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2002

Oxide Reliability

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Section: Si -O -Simentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed here. The importance of stressinduced-leakage-currents (SILCs) and direct tunneling currents will be discussed in the context of device applications, thinner oxides, and oxide reliability. The diminishing importance of breakdown in ultra thin oxides in ultra small devices will be contrasted with the increasing importance of oxide leakage currents. Trap generation is important in the triggering of breakdown and in the formation of SILCs. Trap generation will be discussed in some detail. Various statistical formulations of oxide breakdown, and how these distributions are related to trap generation, will be discussed. All of these effects will be related to oxide reliability and oxide integrity. An extensive bibliography has been included to help the reader obtain more detailed information concerning the concepts being discussed. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Oxide Wearout, Breakdown, and Reliability 619found in an early review paper [20]. This wearout/breakdown model will be referred to as the "Klein/Solomon" model below when comparisons with modern works are needed.The Klein/Solomon model has been refined and confirmed continuously from the 1970s through the present time [10,20,. The extent of the damage is determined both by the 1/2 CV 2 energy stored in the capacitor and by the rate at which this energy discharges through the local hot spot [10,20,75,82,83,88,92,93,96,[100][101][102]. The local hot spot is often accompanied by light emission, in many cases incandescence [8-10, 103-115]. Several techniques have been developed for using the damage introduced during the breakdown to study the breakdown process [80,[116][117][118][119][120][121][122][123][124]. During the breakdown event, the stored energy in the capacitor, 1/2 CV 2 , partially discharges through the breakdown region in a time limited by the impedance of the total measurement system [8][9][10][82][83][84][85].The local breakdowns are intimately coupled to the trap generation and various trap generation models will be discussed in a separate section.During the breakdowns described by Klein/Solomon, one of two scenarios is possible during and following a breakdown discharge. Which scenario takes place depends on the oxide thickness, the oxide area, the magnitude of the stored energy, the ...

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“…Throughout these conversions, the total number of defects, which is the sum of precursors and interface states, remains constant. Recent work, [14][15][16][17][18] however, shows that there are cases where additional defects are generated.…”

Section: Introductionmentioning

confidence: 99%

“…[15][16][17][18] The stress can be the substrate hot hole injection, 15 Fowler-Nordheim injection, 16,17 and plasma charging. 18 When the stress is resumed, these generated precursors enhance the device degradation significantly and, thus, reduce device lifetime.…”

Section: Introductionmentioning

confidence: 99%

Mechanism for the generation of interface state precursors

Zhang

Sii

Degraeve

et al. 2000

Journal of Applied Physics

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Interface states formation in a localized charge trapping nonvolatile memory deviceThe generation of interface states plays an important role in the degradation of submicrometer devices. Previous attention was mainly focused on the conversion between interface states and their precursors. The total number of defects, which is the sum of precursors and interface states, is often implicitly assumed to be constant. However, recent work indicates that this number could be increased. The mechanism for the generation of new precursors is still not clear and the objective of this article is to throw light on it. The work is concentrated on investigating the roles played by hydrogen and the holes trapped in the oxide. It is found that, although the H 2 or the trapped hole alone does not create precursors, their simultaneous presence causes the damage. The hydrogen species can be either supplied externally or released within the device. The generation is thermally activated, but saturates at a defect-limited level. The generation kinetics is studied and the rate limiting mechanism is discussed. Efforts have been made to unveil the differences between the generated precursors and those originally in the device, in terms of their existing forms, thermal stability, annealing behavior, dependence on the hole fluence, and the hydrogen involvement. It is concluded that they originate from different defects.

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The Effect of High Temperature Anneal on Electrical Stress‐Generated Defects in Metal Oxide Semiconductor Structures

Cited by 6 publications

References 0 publications

Oxide Wearout, Breakdown, and Reliability

Oxide Wearout, Breakdown, and Reliability

Oxide Wearout, Breakdown, and Reliability

Mechanism for the generation of interface state precursors

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