The effects of Ca and Pd dopants on gold bonding wire and gold rod

Saraswati, T.; Sritharan, Thirumany; Pang, C.I.; Chew, Y.H.; Breach, C.D.; Wulff, F.; Mhaisalkar, Subodh; Wong, Chee Cheong

doi:10.1016/j.tsf.2004.05.032

Cited by 12 publications

(9 citation statements)

References 7 publications

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“…Wire bonding accounts for over 90% (Harman, 1997;Saraswati et al, 2004;Tummala, 2001) of the entire chip to package interconnections formed. Ultrasonic wedge bonding is one of the three: thermocompression bonding, thermosonic bonding and ultrasonic bonding, by which the electric transport between the die and lead-frame or metallization is realized.…”

Section: Introductionmentioning

confidence: 99%

In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

Wang

et al. 2009

Journal of Materials Processing Technology

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Section: Introductionmentioning

confidence: 99%

In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

Wang

et al. 2009

Journal of Materials Processing Technology

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“…Generally, alloying elements are added to Au bonding wires to increase wire stiffness [1][2][3] and to increase wire sweep resistance during the epoxy molding compound (EMC) molding process. More alloying elements are added for finer wires.…”

Section: Introductionmentioning

confidence: 99%

Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability

Gam

Kim

Cho³

et al. 2006

Journal of Elec Materi

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Finer pitch wire bonding technology has been needed since chips have more and finer pitch I/Os. However, finer Au wires are more prone to Au-Al bond reliability and wire sweeping problems when molded with epoxy molding compound. One of the solutions for solving these problems is to add special alloying elements to Au bonding wires. In this study, Cu and Pd were added to Au bonding wire as alloying elements. These alloyed Au bonding wires-Au-1 wt.% Cu wire and Au-1 wt.% Pd wire-were bonded on Al pads and then subsequently aged at 175°C and 200°C. Cu and Pd additions to Au bonding wire slowed down interfacial reactions and crack formation due to the formation of a Cu-rich layer and a Pd-rich layer at the interface. Wire pull testing (WPT) after thermal aging showed that Cu and Pd addition enhanced bond reliability, and Cu was more effective for improving bond reliability than Pd. In addition, comparison between the results of observation of interfacial reactions and WPT proved that crack formation was an important factor to evaluate bond reliability.

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“…The proposed sample B10% has the best results from our study and could be interesting to be cycling tested. Other species as calcium, beryllium and barium has demonstrated higher hardness gain [19,27,28] and so, should be interesting to investigate. The increase of hardness is linked to an increase of lifetime, but no direct proportionality exists.…”

Section: Discussionmentioning

confidence: 99%

Investigation of boron and nitrogen ion beam implantation in gold thin films for ohmic MEMS switch contact improvement

Arrazat

Inal

Gergaud

2013

2013 Transducers &Amp; Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems

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The effects of Ca and Pd dopants on gold bonding wire and gold rod

Cited by 12 publications

References 7 publications

In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

In situ measurement of bond resistance varying with process parameters during ultrasonic wedge bonding

Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability

Investigation of boron and nitrogen ion beam implantation in gold thin films for ohmic MEMS switch contact improvement

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