The piezoelectronic stress transduction switch for very large-scale integration, low voltage sensor computation, and radio frequency applications

Abstract

The piezoelectronic transduction switch is a novel device with high potential as a post-CMOS transistor due to its predicted multi-GHz, low voltage performance on the VLSI-scale. However, the operating principle of the switch has much wider applicability. We use theory and simulation to optimize the device across a wide range of length scales and application spaces and to understand the physics underlying its behavior. We show that the four-terminal VLSI-scale switch can operate at a line voltage of 115 mV while as a low voltage-large area device, ≈200 mV operation at clocks speeds of ≈2 GHz can be achieved with a desirable 10 4 On/Off ratio-ideal for on-board computing in sensors. At yet larger scales, the device is predicted to operate as a fast (≈250 ps) RF switch exhibiting high cyclability, low On resistance and low Off capacitance, resulting in a robust switch with a RF figure of merit of ≈4 fs. These performance benchmarks cannot be approached with CMOS which has reached fundamental limits. A combination of finite element modeling and ab initio calculations enables prediction of switching voltages for a given design. A multivariate search method then establishes a set of physics-based design rules, discovering the key factors for each application. The results demonstrate that the piezoelectronic transduction switch can offer fast, low power applications spanning several domains of the information technology infrastructure.

Thickness‐dependent domain wall reorientation in 70/30 lead magnesium niobate‐ lead titanate thin films

“…9,14 Research on such compositions in thin film form has been undertaken for the improvement of numerous ferroelectric thin film-based microelectromechanical systems (MEMS) and devices. [15][16][17][18][19] In addition to implementation of high d 33 or high e r piezoelectrics, MEMS performance can be enhanced with reduced operating voltages, increased device capacitance, and increased switching speeds. These design goals are, in principle, achievable via thickness reduction in the ferroelectric.…”

Ferroelectric memory: state-of-the-art manufacturing and research

“…[76,77]). Особый интерес вызывает проект создания пьезоэлектронного транзистора PET (PiezoElectronic Transistor), продвигаемого фирмой IBM и проект создания соответствующих устройств пьезоэлектронной памяти PETMEM (Piezoelectronic Transduction Memory Device), выполняемый консорциумом европейских университетов и компаний при участии исследовательских отделов IBM в рамках европейской программы Horizon 2020 [77][78][79][80][81][82]. Принцип действия устройств основан на использовании фазового перехода диэлектрик-металл в пьезорезисторе в результате давления, создаваемого пьезоэлектриком.…”

SmS/EuS/SmS Tri-Layer Thin Films: The Role of Diffusion in the Pressure Triggered Semiconductor-Metal Transition

“…Materials science plays a significant role in the fabrication of new devices based on chemical compounds with specific properties, providing unprecedented device capabilities. Such a device is the piezoelectronic transistor (PET) [1,2,3,4], which can exploit the pressure-induced semiconductor to metal transition (SMT) of certain compounds. Examples are Sm chalcogenides [5,6], Mott insulators, as well as other material oxides (e.g., Sr 2 IrO 4 ) [7].…”

“…Such elements, for example, are Gd and Y [12,13,17,18], both decreasing the phase transition to even lower pressure. This tunability of the piezoresistive response promotes SmS and alloyed SmS as possible candidates for memory and RF (radio frequency) switching devices [1,2,3,4,19].…”