The Relation Between Crystalline Phase, Electronic Structure, and Dielectric Properties in High-K Gate Stacks

Sayan, Şafak; Croft, Mark; Nguyen, Nhan V.; Emge, T.; Ehrstein, James R.; Levin, Igor; Suehle, John S.; Bartynski, Robert; Garfunkel, Eric

doi:10.1063/1.2062944

Cited by 3 publications

(1 citation statement)

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“…We hypothesize that the tunnel current in Ti-doped sample is increasing with increasing titanium concentration because of a decrease in the metal to oxide barrier height as TiO 2 has smaller bandgap; the bandgap of amorphous HfO 2 and TiO 2 are 6.0 eV and 3.1 eV, respectively. 46,47 Moreover, prior work on ALD titanium doped HfO x has independently measured the barrier height and observed a similar trend. 48 Whether one is considering direct tunneling or trap assisted tunneling, the current density is exponentially dependent on the barrier height.…”

Section: Forming Characteristicsmentioning

confidence: 57%

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

et al. 2022

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Section: Forming Characteristicsmentioning

confidence: 57%

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

et al. 2022

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Characterization of High‐ k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis

Filatova

Sokolov

Кожевников

2012

High‐k Gate Dielectrics for CMOS Technology

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Compositional dependence of linear and nonlinear optical response in crystalline hafnium zirconium oxide thin films

Ihlefeld

Luk

Smith

et al. 2020

Journal of Applied Physics

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Composition dependence of second harmonic generation, refractive index, extinction coefficient, and optical bandgap in 20 nm thick crystalline Hf1−xZrxO2 (0 ≤ x ≤ 1) thin films is reported. The refractive index exhibits a general increase with increasing ZrO2 content with all values within the range of 1.98–2.14 from 880 nm to 400 nm wavelengths. A composition dependence of the indirect optical bandgap is observed, decreasing from 5.81 eV for HfO2 to 5.17 eV for Hf0.4Zr0.6O2. The bandgap increases for compositions with x > 0.6, reaching 5.31 eV for Hf0.1Zr0.9O2. Second harmonic signals are measured for 880 nm incident light. The magnitude of the second harmonic signal scales with the magnitude of the remanant polarization in the composition series. Film compositions that display near zero remanent polarizations exhibit minimal second harmonic generation while those with maximum remanent polarization also display the largest second harmonic signal. The results are discussed in the context of ferroelectric phase assemblage in the hafnium zirconium oxide films and demonstrate a path toward a silicon-compatible integrated nonlinear optical material.

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The Relation Between Crystalline Phase, Electronic Structure, and Dielectric Properties in High-K Gate Stacks

Cited by 3 publications

References 25 publications

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

Characterization of High‐ k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis

Compositional dependence of linear and nonlinear optical response in crystalline hafnium zirconium oxide thin films

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The Relation Between Crystalline Phase, Electronic Structure, and Dielectric Properties in High-K Gate Stacks

Cited by 3 publications

References 25 publications

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfOx RRAM

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfOx RRAM

Characterization of High‐ k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis

Compositional dependence of linear and nonlinear optical response in crystalline hafnium zirconium oxide thin films

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Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM