Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

Ali, Tarek; Polakowski, P.; Büttner, Thiess; Kämpfe, Thomas; Rudolph, Matthias; Pätzold, B.; Hoffmann, R.; Czernohorsky, M.; Kühnel, Kati; Steinke, P.; Zimmermann, Katrin; Biedermann, Kati; Eng, Lukas M.; Seidel, Konrad; Müller, Johannes

doi:10.1109/ted.2019.2921618

Cited by 23 publications

(22 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The coercive field in the real stack will therefore most likely be resembled by a combination of stress and electric coupling of the two layers. [ 24 ] Moreover, gradients, local distributions, and piezoelectricity may further influence the observed behavior.…”

Section: Resultsmentioning

confidence: 99%

Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films

Ali

Lehninger

Lederer

et al. 2022

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

The properties of hybrid ferroelectric (FE) and antiFE (AFE) films integrated in a single capacitor stack is reported. The stack lamination (4 × 5 nm) or (2 × 10 nm) using an Alumina (Al2O3) interlayer, material type (Si‐doped HfO2 (HSO) and Zr doped HfO2 (HZO)), precursor condition (TEMA‐Hf and Hf/ZrCl4), or dopant concentration (Si and Zr) are investigated for laminate stack properties. Optimized FE properties (higher 2Pr and a lower fraction of the monoclinic phase) are observed at (2 × 10 nm) laminates compared to a single 20 nm film thickness. The hybrid laminate stack as FE‐FE, AFE‐FE, DE‐FE, or DE‐AFE using (2 × 10 nm) based laminates are explored in terms of the output FE hysteresis (2Pr, 2Ec) and structural properties by X‐ray diffraction. The hybrid AFE‐FE stack shows the potential of tailoring the output FE hysteresis 2Ec by varying the fraction of the AFE phase. The hybrid AFE‐FE stack is studied for the HSO and HZO materials at optimal FE content for the first laminate layer while varying the Si or Zr content to stabilize different degrees of an AFE phase in the second laminate layer. The superposition of the hybrid AFE‐FE hysteresis shows a systematic 2Ec control. A model is developed to describe the tailored output FE hysteresis via the tuning of a hybrid AFE‐FE stack. The role of stack lamination at hybrid‐stabilized phases inside a single stack is explored with the aim for a controlled and optimized FE hysteresis shape toward a low power (2Ec) operation.

show abstract

Section: Resultsmentioning

confidence: 99%

Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films

Ali

Lehninger

Lederer

et al. 2022

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, high operation voltages increase the power consumption of neuromorphic systems. Three-dimensional structure and gate stack engineering can be used to reduce the power consumption ( Ali et al., 2019 ).…”

Section: Discussionmentioning

confidence: 99%

Emerging Materials for Neuromorphic Devices and Systems

et al. 2020

View full text Add to dashboard Cite

“…Thus, the MFMIS can achieve lower voltage switching relative to the MFIS stack when the MFM to MIS area ratio is tuned at a smaller MFM area. [ 75 ]…”

Section: Memory‐based Applications Of Fluorite‐structured Materialsmentioning

confidence: 99%

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Ali

Lehninger

et al. 2022

Adv Funct Materials

View full text Add to dashboard Cite

Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory-related and energy-related applications. Perovskite materials (e.g., bulk ceramics) remain the most common materials for many applications. However, due to large deposition thickness, these materials are not appropriate for future miniaturized devices. In 2011, FE and AFE properties were reported in Si-doped HfO 2 thin films. HfO 2 -based FE and AFE materials have several advantages over conventional materials, such as ultrathin deposition thickness (in range of nanometers), compatibility with existing Si semiconductor technology, and suitability for the integration within 3-D nanostructures. Therefore, fluorite-structured materials can be appropriate for miniaturized devices. These fluorite-structured materials are extensively studied for memory and energy-related applications. The first review on this topic was published after four years of discovering the FE and AFE properties in these materials. From the past decade, a lot of research has been reported about the detailed mechanism and application of these materials. This review insightfully discusses the progress in the research of fluorite-structured materials and critically discusses some potential applications. Here some challenges are also discussed, new knowledge is extracted, and promising future research directions of these materials are suggested.

show abstract

Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

Cited by 23 publications

References 29 publications

Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films

Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films

Emerging Materials for Neuromorphic Devices and Systems

Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Contact Info

Product

Resources

About