2003
DOI: 10.1016/s0040-6090(03)01028-9
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Thermal stability of Mo/Si multilayers with boron carbide interlayers

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Cited by 56 publications
(28 citation statements)
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“…Therefore, more chemically stable MLMs with diffusion barriers replace the standard Mo/Si MLMs as the base MLM stack [18][19][20][21]. In the simulation, SrTiO 3 (STO), SrRuO 3 (SRO) and PbZr 0.2 Ti 0.8 O 3 (PZT) were used as the buffer, electrodes, and piezoelectric layers, respectively.…”
Section: Active Mlm Structurementioning
confidence: 99%
“…Therefore, more chemically stable MLMs with diffusion barriers replace the standard Mo/Si MLMs as the base MLM stack [18][19][20][21]. In the simulation, SrTiO 3 (STO), SrRuO 3 (SRO) and PbZr 0.2 Ti 0.8 O 3 (PZT) were used as the buffer, electrodes, and piezoelectric layers, respectively.…”
Section: Active Mlm Structurementioning
confidence: 99%
“…Loss of reflectivity and interdiffusion between materials has been observed in Mo/Si systems during heat treatment. An interlayer of B 4 C [5,6] was deposited between Mo and Si layers to overcome the formation of molybdenum silicide layers. Other systems such as metal/Al 2 O 3 [7] or Ni/C [8] have been investigated and similar phenomena were observed.…”
Section: Introductionmentioning
confidence: 99%
“…26,49 Numerous studies investigated the thermal stability of Mo-Si MLs that operate in the EUV region. 38,[50][51][52][53][54][55][56][57][58][59] The MLs were exposed to high temperatures either to study the kinetics of silicide formation, [60][61][62] to control the growth and optimize ML fabrication, 52,54,62,63 or to reduce stress in the MLs. 55,56,64,65 Structural changes in Mo-Si MLs due to increased temperature are of great importance for lithography applications due to the stringent requirements for reflectance and wavelength stability and figure errors due to stress changes in the MLs.…”
Section: D5 High Reflectivity Low Stress and Thermal Stability Comentioning
confidence: 99%