Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension

Chang, Wen-Teng; Lin, Yu-Seng; Shih, Cheng-Ting

doi:10.1016/j.sse.2014.11.012

Cited by 4 publications

(1 citation statement)

References 9 publications

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“…Venkataraman et al proposed a compact analytical model of the threshold voltage of strained-silicon on silicon-germanium-on-insulator (SGOI) MOSFETs [19]. The experimental analysis of threshold voltage and transconductance shifting of strained-SiGe p-channel reliant on channel width-to-length (W/L) ratio has been reported [20]. Furthermore, the integration of strain in a GAA FET can be accomplished by multi-layered epitaxy of alternating Si/SiGe layers, source/drain regrowth epitaxy, and stressor deposition [21].…”

Section: Introductionmentioning

confidence: 99%

Design and optimization of stress/strain in GAA nanosheet FETs for improved FOMs at sub-7 nm nodes

Mohapatra¹,

Jena

Das³

et al. 2023

Phys. Scr.

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Stress/strain engineering techniques are employed to boost the performance of Gate-all-around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7nm technology nodes and beyond. In this work, we report on the 3D numerical simulation study of the impacts of source/drain epitaxial and uniaxial strained-SiGe channel stresses on p-type NSFETs. It is shown that the uniaxial strained-SiGe channel improves the drive current by up to 107% due to higher compressive stress while the 3-stack NSFET can achieve an enhancement in drive current even up to 187% using a 30% Ge mole fraction. Furthermore, we compare the multiple stacked channel NSFETs and nanowire FETs (NWFETs) considering different strain techniques. As compared to a 3-stack strained-SiGe NWFET, NSFETs show 27% and 10% enhancements in ION and SS, respectively. Vertically stacked NSFETs are shown to be the best option to improve the hole mobility under biaxial and uniaxial compressive strain rather than NWFETs. We also look at how the Ge mole fraction affects various electrical properties in a uniaxial strained-SiGe channel with shrinking dimensions of scaled NSFETs. It is observed that for a fixed Lg, ION/IOFF ratio, SS and DIBL decrease with the increase in Ge mole fraction.

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Section: Introductionmentioning

confidence: 99%