Towards implementation of a nickel silicide process for CMOS technologies

Structural and electrical characterization of the nickel silicide films formed at 850°C by rapid thermal annealing of the Ni/Si(100) films

“…Therefore, thickness dependence of the thermal stability of NiSi 2 thin film is crucial criterion for deep submicron devices. Apart from this, with the continuous scaling down of devices, silicide film thickness (especially ≤50 nm) becomes an important parameter, which controls first stages of the silicide formation and other phenomena such as nucleation, lateral growth, stress and texture [28][29][30]. Therefore, it is very important to understand and control the silicide formation as function of the film thickness for a fixed annealing temperature.…”

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

“…Having advantages such as low temperature silicidation process, low silicon consumption, no bridging failure property, smaller mechanical stress, no adverse narrow line effect on sheet resistance, smaller contact resistance for both n-and p-Si and so on, nickel silicide has been thought as the most promising silicide layer [2]. Even so, NiSi has several challenges and one of them is the hightemperature degradation of NiSi [3]. There have been many attempts to improve the thermal stability of NiSi films [4][5][6][7].…”

Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

“…Moreover, boron cluster implantation could reduce the boron penetration that BF 2 implantation may induce due to the fluorine [5]. It can also reduce the fluctuation of MOSFET parameters, compared with boron implantation [6,7]. This approach offers various advantages, such as high throughput, low beam divergence, and high dose implantation.…”

“…However, poor thermal stability is a main obstacle in the nano scale CMOSFET. Therefore, forming a NiSi film, with a uniform orientation in ultra shallow junctions, is still a big challenge [6,9].…”