Transient ballistic transport in GaN

Mansour, Nabil S.; Bannov, N. A.; Littlejohn, M. A.

doi:10.1063/1.363952

Cited by 17 publications

(8 citation statements)

References 20 publications

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“…As the electric field increases, a substantial number of electrons get sufficient energy and consequently the polar optical phonon emission becomes possible. The slope of the electron velocity at low electric field decreases abruptly at approximately 20 kV/cm due to the onset of polar optical phonon emission [14]. However, this phenomenon vanishes at high temperatures.…”

Section: Monte Carlo Calculationsmentioning

confidence: 96%

Electron transport properties of gallium nitride for microscopic power device modelling

Benbakhti

Rousseau

Soltani

et al. 2009

J. Phys.: Conf. Ser.

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Abstract. The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large selfheating. The accurate knowledge of transport properties as a function of the lattice temperature is essential in order to make a good thermal management to optimise the device performance. In this paper, accurate expressions describing the main transport properties as function of temperature and electric field for wurtzite GaN have been extracted starting from Monte Carlo simulations and then using a genetic algorithm. In particular, these expressions take into account the abrupt change in electron velocity slope at a low electric field (∼20 kV/cm). Using the same methodology, we have determined the temperature dependence of other physical parameters such as the low field mobility, saturation velocity, critical electric field and the corresponding peak velocity in a temperature range of 300 K -700 K. The results show a very good agreement between the theoretical and experimental values.

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Section: Monte Carlo Calculationsmentioning

confidence: 96%

Electron transport properties of gallium nitride for microscopic power device modelling

Benbakhti

Rousseau

Soltani

et al. 2009

J. Phys.: Conf. Ser.

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“…The possibility of transient ballistic transport in GaN was demonstrated to occur for applied electric fields greater than 140 kV/cm [119], and investigations on the transient transport regime have indicated the possibility of existence of an overshoot effect in both the electron-drift velocity [120][121][122][123] and mean energy [123]. In the work of Ref.…”

Section: Nonlinear Transport In Highly-polar Semiconductorsmentioning

confidence: 98%

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Rodrigues¹,

Silva²,

Silva³

et al. 2010

Braz. J. Phys.

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The nowadays notable development of all the modern technology, fundamental for the progress and well being of world society, imposes a great deal of stress in the realm of basic Physics, more precisely on ThermoStatistics. We do face situations in electronics and optoelectronics involving physical-chemical systems farremoved-from equilibrium, where ultrafast (in pico-and femto-second scale) and non-linear processes are present. Further, we need to be aware of the rapid unfolding of nano-technologies and use of low-dimensional systems (e.g., nanometric quantum wells and quantum dots in semiconductor heterostructures). All together this demands having an access to a Statistical Mechanics being efficient to deal with such requirements. It is worth noticing that the renowned Ryogo Kubo once stated that "statistical mechanics has been considered a theoretical endeavor. However, statistical mechanics exists for the sake of the real world, not for fictions. Further progress can only be hoped by close cooperation with experiment". Moreover, one needs to face the study of soft matter and fluids with complex structures (usually of the average self-affine fractal-like type). This is relevant for technological improvement in industries like, for example, that of polymers, petroleum, cosmetics, food, electronics and photonics (conducting polymers and glasses), in medical engineering, etc. It is then required to introduce a thermo-hydrodynamics going well beyond the classical (Onsagerian) one. Moreover, in the both type of situations above mentioned there often appear difficulties of description and objectivity (existence of so-called "hidden constraints"), which impair the proper application of the conventional ensemble approach used in the general, logically and physically sound, and well established Boltzmann-Gibbs statistics. A tentative to partially overcome such difficulties consists in resorting to non-conventional approaches. Here we briefly describe the construction of a Non-Equilibrium Statistical Ensemble Formalism (NESEF) that can deal, within a certain degree of success, with the situations above described. Several particular instances involving experimental observations and measurements in the area of semiconductor physics and in physics of fluids, which were analyzed in the context of the theory, are summarized. They comprise the cases of ultrafast optical spectroscopy; optical and transport processes in low-dimensional complex semiconductors; nonlinear transport in doped highly-polar semiconductors (of use in "blue diodes") under moderate to high electric fields; nonlinear higher-order thermo-hydrodynamics in fluids under driven flow, in normal solutions and in complex situations as in solutions of polymers, micelles, DNA, and in microbatteries.

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“…Focus on the improvement of III-nitrides-based devices through the use of submicron channels has stimulated research on their transient-transport properties, because in this case, the carriers may not attain the steady-state transport regime. The possibility of transient ballistic transport in GaN was demonstrated to occur when electric fields greater than 140 kV/cm are applied [37], and investigations of the transient transport regime have indicated the possibility of an overshoot effect in both the electron drift velocity and mean energy [38][39][40]. The explanation for the existence of the overshoot effect in the III-nitrides, when intervalley scattering is negligible, was considered to be due to the interplay of energy and momentum relaxation times.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

Rodrigues

Luzzi

2021

Pramana - J Phys

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In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinear quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations using Monte Carlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier concentrations. The agreement between the results obtained using nonlinear quantum kinetic theory, with those of Monte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.

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Transient ballistic transport in GaN

Cited by 17 publications

References 20 publications

Electron transport properties of gallium nitride for microscopic power device modelling

Electron transport properties of gallium nitride for microscopic power device modelling

The role of nonequilibrium thermo-mechanical statistics in modern technologies and industrial processes: an overview

Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

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