2009 IEEE International Conference on 3D System Integration 2009
DOI: 10.1109/3dic.2009.5306573
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TSV metrology and inspection challenges

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Cited by 10 publications
(4 citation statements)
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“…Aspect ratios of better than 40:1 are achievable by this method. Several researchers have used the Bosch method for their TSV evaluations [25,27,28,34,42]. Others have investigated non-Bosch TSV etch processes, such as a magnetically-enhanced capacitively-coupled plasma etch method, to achieve aspect ratios approaching 30:1 [30] or an enhanced etch process to achieve deep vias with minimal sidewall roughness, i.e.…”
Section: Tsv Processesmentioning
confidence: 99%
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“…Aspect ratios of better than 40:1 are achievable by this method. Several researchers have used the Bosch method for their TSV evaluations [25,27,28,34,42]. Others have investigated non-Bosch TSV etch processes, such as a magnetically-enhanced capacitively-coupled plasma etch method, to achieve aspect ratios approaching 30:1 [30] or an enhanced etch process to achieve deep vias with minimal sidewall roughness, i.e.…”
Section: Tsv Processesmentioning
confidence: 99%
“…polymers, followed by appropriate thermal processing and removal of excess material from the surface. Extensive work has been done in the development of each of these processes, and the characterization of the resulting TSV's at a variety of dimensions and pitches [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43].…”
Section: Tsv Processesmentioning
confidence: 99%
“…Thin wafer characterization usually consists of measurements of defects on the polished surface (particles, scratches), TSV reveal,, total thickness variation, wafer bow, and fracture strength [8,11,47]. In this section we will focus on wafer bow and fracture strength.…”
Section: Thin Wafer Characterizationmentioning
confidence: 99%
“…The TSV process comprises via etching, via insulation, deposition of the diffusion barrier/liner/seed, deposition of the metal/alloy to fill the TSV, followed by appropriate thermal processing and removal of any overburden. Extensive work has been done in the fabrication, integration, and characterization of TSVs (27,(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40)(41)(42)(43)(44)(45)(46)(47). The TSVs may be etched first before any other process, or last, from the backside of thinned wafer, as shown in Figure 7 compared very deep TSVs, in the 100 μm range, with AR approaching 50:1 in the FEOL (29).…”
Section: Tsv Processesmentioning
confidence: 99%