Ultra-Thin QFN-Like 3D Package with 3D Integrated Passive Devices

Ghannam, Ayad; Haare, Niek van; Bravin, Julian; Brandl, Elisabeth; Brandstätter, B.; Klingler, Hannes; Auer, Benedikt; Meunier, Philippe; Kersjes, Sebastiaan

doi:10.1109/ectc.2019.00276

Cited by 4 publications

(4 citation statements)

References 4 publications

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“…New vertical designs for power modules 206 : Overmold 29,67,68 ; Double‐sided DBC 69‐72 ; IPM 73‐75 ; 3D integration 65,76,77 …”

Section: Internal Structure and Characteristics Of Power Modulesmentioning

confidence: 99%

“…are presented in this work. In addition, the technical limitations are described and summarized (λ and CTE), pinpointing the main technical solutions adopted by the manufacturers and the trends arising from recent experimental innovations (overmold, 29,67,68 double-sided DBC, [69][70][71][72] IPM, [73][74][75] and 3D structure 65,76,77 ). Likewise, the technical characteristics of the cooling systems are also addressed, indicating the proven technologies and the most advanced concepts to evacuate the heat from the power modules, essential to prevent overheating and device destruction.…”

Section: Introductionmentioning

confidence: 99%

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The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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Summary In the automotive industry, the design and implementation of power converters and especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely used power semiconductors in most commercial vehicles. However, this trend is beginning to change with the appearance of wide‐bandgap (WBG) devices, particularly silicon carbide (SiC) and gallium nitride (GaN). It is therefore advisable to review their main features and advantages, to update the degree of their market penetration, and to identify the most commonly used alternatives in automotive inverters. In this paper, the aim is therefore to summarize the most relevant characteristics of power inverters, reviewing and providing a global overview of the most outstanding aspects (packages, semiconductor internal structure, stack‐ups, thermal considerations, etc.) of Si, SiC, and GaN power semiconductor technologies, and the degree of their use in electric vehicle powertrains. In addition, the paper also points out the trends that semiconductor technology and next‐generation inverters will be likely to follow, especially when future prospects point to the use of “800 V" battery systems and increased switching frequencies. The internal structure and the characteristics of the power modules are disaggregated, highlighting their thermal and electrical characteristics. In addition, aspects relating to reliability are considered, at both the discrete device and power module level, as well as more general issues that involve the entire propulsion system, such as common‐mode voltage.

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“…New vertical designs for power modules 206 : Overmold 29,67,68 ; Double‐sided DBC 69‐72 ; IPM 73‐75 ; 3D integration 65,76,77 …”

Section: Internal Structure and Characteristics Of Power Modulesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The role of power device technology in the electric vehicle powertrain

Robles

Matallana

Aretxabaleta

et al. 2022

Intl J of Energy Research

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“…In general, the technology involves forming first a 3D re-passivation layer over 3D topography (i.e. a die or a 3D feature) to isolate the 3D interconnects from their surrounding environment while keeping openings in desired locations for electrical connection with underlying device [14]. Then, the 3D interconnects are formed using 3D copper electroplating inside a photoresist.…”

Section: Fuses Realizationmentioning

confidence: 99%

“…Then, the 3D interconnects are formed using 3D copper electroplating inside a photoresist. The particularity of this technology is its capability of forming high aspect ratio 3D-RDL/3D Interconnects over a vertical sidewall [14].…”

Section: Fuses Realizationmentioning

confidence: 99%

Fast cut-off, low I2T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch

Oumaziz

Sarraute

Richardeau

et al. 2021

Microelectronics Reliability

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