Vertical and in-plane heterostructures from WS2/MoS2 monolayers

Gong, Yongji; Lin, Junhao; Wang, Xingli; Shi, Gang; Lei, Sidong; Lin, Zhong; Zou, Xiaolong; Ye, Gonglan; Vajtai, Róbert; Yakobson, Boris I.; Terrones, Humberto; Terrones, Mauricio; Tay, Beng Kang; Lou, Jun; Pantelides, Sokrates T.; Liu, Zheng; Zhou, Wu; Ajayan, Pulickel M.

doi:10.1038/nmat4091

Cited by 2,082 publications

(2,229 citation statements)

References 35 publications

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“…Therefore, there is still a huge room for further study on the controlled synthesis of high‐quality and large‐scale single crystalline 2D GIVMCs. Moreover, in‐situ growth of vertical ( Figure 11 a) and lateral (Figure 11b) heterostructures are very important for exploring the novel physical properties, considering that most of the reports on 2D GIVMCs is currently based on the transferred heterojunctions,130, 243, 244 which may harm the electronic properties231, 240 due to the dangling bonds and adsorbates at the interface. In addition, graphene is an ideal template to promote the nucleation and growth of other 2DLMCs crystals for producing functional hybrid structures via CVD method (Figure 11c),198, 204, 207 which may result in the modulation of the electric and optical properties coupled with graphene.…”

Section: Discussionmentioning

confidence: 99%

“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

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Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Discussionmentioning

confidence: 99%

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…CVD is a well‐established technology that has been demonstrated as a facile method for synthesizing large‐scale monolayer crystals, including graphene, MX 2 ,73, 110, 126, 127, 128, 129, 130, 131, 132, 133, 134 and their heterojunctions 135, 136, 137, 138, 139, 140. Compared with the exfoliation method, the direct synthesis of few‐layer and monolayer MX 2 by CVD is critical to large‐scale applications.…”

Section: Preparation Methodsmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

et al. 2017

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With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

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“…Recently, considerable research interest has been intrigued by the vertically stacked vdWs integration of various 2DLMs, which provides infinite possibilities by overcoming the limitation of lattice matching and processing compatibility 6, 7, 8, 9, 10, 11, 12, 13, 14. Among various categories of vertically stacked vdWs heterostructured devices, the tunneling field effect transistor (TFET), which provides a promising sub‐60‐mV dec −1 subthreshold swing (SS), has been regarded as a promising application of vdWs heterostructure for future energy‐efficient electronics 15, 16, 17, 18, 19…”

Section: Introductionmentioning

confidence: 99%

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

et al. 2018

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Benefiting from the technique of vertically stacking 2D layered materials (2DLMs), an advanced novel device architecture based on a top‐gated MoS2/WSe2 van der Waals (vdWs) heterostructure is designed. By adopting a self‐aligned metal screening layer (Pd) to the WSe2 channel, a fixed p‐doped state of the WSe2 as well as an independent doping control of the MoS2 channel can be achieved, thus guaranteeing an effective energy‐band offset modulation and large through current. In such a device, under specific top‐gate voltages, a sharp PN junction forms at the edge of the Pd layer and can be effectively manipulated. By varying top‐gate voltages, the device can be operated under both quasi‐Esaki diode and unipolar‐Zener diode modes with tunable current modulations. A maximum gate‐coupling efficiency as high as ≈90% and a subthreshold swing smaller than 60 mV dec−1 can be achieved under the band‐to‐band tunneling regime. The superiority of the proposed device architecture is also confirmed by comparison with a traditional heterostructure device. This work demonstrates the feasibility of a new device structure based on vdWs heterostructures and its potential in future low‐power electronic and optoelectronic device applications.

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Vertical and in-plane heterostructures from WS2/MoS2 monolayers

Cited by 2,082 publications

References 35 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

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