2010
DOI: 10.1117/12.865306
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WSi 2 /Si multilayer sectioning by reactive ion etching for multilayer Laue lens fabrication

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Cited by 3 publications
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“…Films with thickness ranging from 80nm to 1µm were patterned using optical lithography and reactive ion etching in SF6 + O2 17 into both quarter wavelength co--planar wavequide (CPW) resonators and lumped element resonators. Unless otherwise noted, the results below are for CPW resonators with a center strip width of 8 μm and a gap width of 7 μm.…”
mentioning
confidence: 99%
“…Films with thickness ranging from 80nm to 1µm were patterned using optical lithography and reactive ion etching in SF6 + O2 17 into both quarter wavelength co--planar wavequide (CPW) resonators and lumped element resonators. Unless otherwise noted, the results below are for CPW resonators with a center strip width of 8 μm and a gap width of 7 μm.…”
mentioning
confidence: 99%