X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks

King, Paul L.; Pan, Lehua; Pianetta, P.; Shimkunas, A. R.; Mauger, P. E.; Seligson, Daniel

doi:10.1117/12.940362

Cited by 3 publications

(3 citation statements)

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“…In fact, radiation damage to substrates in e‐beam evaporation is well known. Moreover, not only e‐beam radiation has been used to hydrogenate graphene, but BN is susceptible to X‐ray radiation in the presence of hydrogen . Given abundant hydrogen coming from the transfer process, it is highly possible that with the assist of hydrogen and radiation, BN makes bonds to graphene, transforming some sp 2 bonds to sp 3 ‐like, resulting in an enhancement of the D and D ′ peak.…”

Section: Resultsmentioning

confidence: 99%

Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene

Han

Yan

Gao

et al. 2014

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As a two-dimensional material, graphene is highly susceptible to environmental influences. It is therefore challenging to deposit dielectrics on graphene without affecting its electronic properties. It is demonstrated that the effect of the dielectric deposition on graphene can be reduced by using a multilayer hexagonal boron nitride film as a buffer layer. Particularly, the boron nitride layer provides significant protection in magnetron sputtering deposition. It also enables growth of uniform and charge trapping free high-k dielectrics by atomic layer deposition. The doping effect of various deposition methods on graphene has been discussed.

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Section: Resultsmentioning

confidence: 99%

Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene

Han

Yan

Gao

et al. 2014

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“…They have been used as interlayer dielectrics in very large-scale integration (VSLI) devices and as the active insulating layer for metal-insulator-metal devices in switching arrays for liquid-crystal displays (Strongin et al, 1992). Boron nitride films can also be used as electron and X-ray lithography masks (Levy et al, 1988;King et al, 1987). Boron nitride films have been prepared previously by the reaction of ammonia and boron trichloride at 250-1,200"C (Motojima et al, 1982;Sano and Aoki, 19811, reaction of ammonia and diborane at 25O-1,25O0C (Rand and Roberts, 1968;Murarka et al, 1979;Adams and Capio, 1980;Kim et al, 19841, reaction of diborane and ammonia in a plasma (Gafri et al, 1980;Hyder and Yep, 1976), pyrolysis of borazine at 300-450°C (Adams, 1981), reaction of decaborane and ammonia at 300-800°C (Nakamura, 1985), and metal-organic chemical vapor deposition (MOCVD) from triethylboron and ammonia at 750-1,200"C (Nakamura, 1986).…”

Section: Introductionmentioning

confidence: 99%

Nitridation and CVD reactions with hydazine

1995

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“…Typical materials developed for this purpose are boron-nitride (BN) (1,2), boron-nitro-carbide (BNC) (3,4), boron-doped silicon (Si) (5,6), silicon-nitride (SIN) (7,8), and silicon-carbide (SIC) (9,10). However, the boron compounds such as BN got out of use because of the low radiation durability (11)(12)(13). Up to these days, Si, SiN, and SiC have been widely used.…”

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Process Technologies for Ta / SiC X‐Ray Masks

Yamada

Kondo

Nakaishi

et al. 1990

J. Electrochem. Soc.

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This paper describes process technologies for an x-ray mask using Ta as the x-ray absorber and SiC as the x-ray membrane. SiC can be grown heteroepitaxially in a coldwall LPCVD reactor at 1000~ and 3.5 torr using a gas mixture of SiHC13, C3H8, and H2. SiC has a stress of 4 x 109 dyn/cm 2 and a Young's modulus of 4.7 x 10 '2 dyn/cm 2. Pure Ta with Ar ions implanted by 150 keV is more stable and dense than Ta alloys and their nitrides. The film density is about 16 g/cm 3 and the stress change due to annealing of 200~ is below 2 x 108 dyn/cm 2. The yield of stress control is 68% for 2 • l0 s dyn/cm 2. The temperature of the membrane during Ta RIE is controlled by He cooling from the back. It is held between 45 ~ and 100~ at a power density of 0.8 W/cm 2. A mixture of C12 and CC14 (1:1) is used as the etching gas. The gas pressure is from 0.18 to 0.2 torr. The etch rate of Ta is 1.2 ~tm/min and the selectivity of Ta to a resist (AMS-1) is 7. A 0.8 ~m thick Ta pattern of 0.15 ~m lines and spaces is obtained by using a 0.5 ~m thick single-layer resist. Electron beam lithography on a thin membrane requires a high-contrast resist (AMS-1) and a well-controlled correction of the proximity effect because of the high electron backscattering on Ta. Si etchback is done by spray etcher using a mixture of HF and HNO3 (1:3) with a high speed of 8 min per mask. The total fabrication process is designed to minimize mask distortion. The maximum mask distortion due to the absorber stress is 0.11 ~m (3~) including the measurement errors of Nikon 2I. The mask used for the measurement had a circular membrane of 60 mm diam and a 32 • 32 mm field window. The SiC was 2 ~m thick and the Ta was 0.8 ~m thick with a stress of 1.4 x 108 dyn/cm 2.It will be the key factor to establish a well-controlled and zero-defect x-ray mask for a successful application of x-ray lithography to deep submicron devices. The x-ray mask consists of some process technologies. Chemical vapor deposition (CVD), reactive ion etching (RIE), and electron beam delineation are the most common. The requirements for x-ray mask materials and processes are somewhat different from those of electronic devices.The x-ray membrane must have a tensile stress high enough to obtain flat surface and avoid vibration due to pressure difference on the two sides of the membrane. Especially, the mask vibration during the x-ray exposure and alignment process is a severe problem resulting in a loss of overlay accuracy and a loss of critical dimension (CD) control. A high stress above 1 x 109 dyn/cm 2 is preferable for this purpose. A high Young's modulus of membrane is

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X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks

Cited by 3 publications

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Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene

Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene

Nitridation and CVD reactions with hydazine

Process Technologies for Ta / SiC X‐Ray Masks

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