The bulk resistivity of Fe-doped metalorganic chemical vapor deposited grown epitaxial InP was determined from current-voltage and capacitance measurements made on Schottky-diode-like devices. The current-voltage data exhibit both an ohmic and a space-charge-limited regime, and the capacitance was found to be independent of applied bias. The electrical thickness was obtained from the capacitance using a relationship appropriate for current injection. Data for two samples representing both thin (∼1 μm) and thick (∼9 μm) epitaxial layers are presented. The resistivities were 6.5×107 Ω cm and 2.2×108 Ω cm.

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The background carrier concentration of nominally undoped InGaAs/InP grown by the hydride process was found to correlate to the x-ray linewidth. A double crystal diffractometer was used to measure the mismatch parallel to the (100) surface as well as the more standard perpendicular mismatch. The epitaxial layers were, in general, found to be tetragonally distorted, and the linewidth was found to correlate to the parallel mismatch. Two regimes for the carrier concentration were identified, one for samples having no parallel mismatch and one for samples with parallel mismatch. In the latter case lattice defects which accommodated the misfit strain such as misfit dislocations are concluded to have been responsible for the carrier concentration.

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